Surface-modified quantum-dot floating layer using novel thiol with large dipole moment for improved feasibility of light-erasable organic transistor memory applications
- Title
- Surface-modified quantum-dot floating layer using novel thiol with large dipole moment for improved feasibility of light-erasable organic transistor memory applications
- Author
- 이화성
- Keywords
- Optical transistor memory; CdSe; Quantum dots; Fluorinated thiol; Dipole moment; Photo-induced recovery
- Issue Date
- 2020-05
- Publisher
- ELSEVIER SCIENCE INC
- Citation
- JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY, v. 85, page. 111-117
- Abstract
- In this study, a new functional thiol with a pentafluorophenyl group was synthesized for the surface modification of CdSe quantum-dot floating layers; this was aimed at the fabrication of organic field-effect transistors (OFETs). The dipole moments and surface properties of the fluorinated thiols were used to control the transistor operations; these thiols acted as surface modifiers of the CdSe quantum-dot floating layers in the OFETs. Further, the new functional thiol exhibited a larger dipole moment than that of the commercial 2,3,4,5,6-pentafluorothiophenol. The OFET comprising the new functional thiol with the pentafluorophenyl group functioned as a normally ON transistor and exhibited bistable current states during nondestructive reading. In addition, it exhibited sensitive responses to electrical-only and light-only biases, which demonstrates its feasibility for light-responsive flash memory applications.
- URI
- https://www.sciencedirect.com/science/article/pii/S1226086X20300514https://repository.hanyang.ac.kr/handle/20.500.11754/163486
- ISSN
- 1226-086X
- DOI
- 10.1016/j.jiec.2020.01.031
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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