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dc.contributor.author김희준-
dc.date.accessioned2021-06-30T04:52:35Z-
dc.date.available2021-06-30T04:52:35Z-
dc.date.issued2000-10-
dc.identifier.citation26th Annual Conference of the IEEE Industrial Electronics Society, v. 1, page. 338-343en_US
dc.identifier.isbn0-7803-6456-2-
dc.identifier.isbn978-0-7803-6456-1-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/162553-
dc.description.abstractThe high efficiency multi-resonant converter (MRC) is capable of operating at a high frequency because the losses are decreased due to the resonant tank circuit. Such a few MHz high frequency applications provide high power density (W/inch/sup 3/) for the converters. However, the resonant voltage stress across the switch of the resonant tank circuit is 4/spl sim/5 times the input voltage. This high voltage stress increases the conduction losses because of on-resistance of a MOSFET with higher rating. In this paper, the AT forward MRC is suggested to solve these problems. It's circuit construction and operation differ from the CM forward MRC. The operational modes of the AT forward MRC are divided to 8 equivalent modes according to the two switching sequences. Mode analysis and experimental results are covered using the equivalent circuits modeled over all of the paper. The operational principle of the resonant converter was verified through the experimental converter with 48 V input voltage, 5 V/50 W output voltage/power and PSpice simulation. The measured maximum voltage stress is 170 V of 2.9 times the input voltage and the maximum efficiency is measured up to 81.66%.en_US
dc.language.isoen_USen_US
dc.publisherIEEEen_US
dc.subjectCircuit simulationen_US
dc.subjectEquivalent circuitsen_US
dc.subjectMOSFET circuitsen_US
dc.subjectSwitching circuitsen_US
dc.subjectStress measurementen_US
dc.subjectSwitchesen_US
dc.subjectRLC circuitsen_US
dc.subjectFrequency conversionen_US
dc.subjectVoltageen_US
dc.subjectResonanceen_US
dc.titleAlternated Forward Multi Resonant Converteren_US
dc.typeArticleen_US
dc.identifier.doi10.1109/IECON.2000.973173-
dc.relation.journal국제Proceeding(기타)-
dc.contributor.googleauthorOh, Won-Seok-
dc.contributor.googleauthorKim, Chang-Sun-
dc.contributor.googleauthorKim, Hee-Jun-
dc.relation.code2012101922-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF ENGINEERING SCIENCES[E]-
dc.sector.departmentDIVISION OF ELECTRICAL ENGINEERING-
dc.identifier.pidhjkim-
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COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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