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dc.contributor.author김태환-
dc.date.accessioned2021-05-24T07:54:18Z-
dc.date.available2021-05-24T07:54:18Z-
dc.date.issued2020-03-
dc.identifier.citationACS APPLIED MATERIALS & INTERFACES, v. 12, no. 14, page. 17130-17138en_US
dc.identifier.issn1944-8244-
dc.identifier.issn1944-8252-
dc.identifier.urihttps://pubs.acs.org/doi/10.1021/acsami.0c02145-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/162316-
dc.description.abstractAs a promising advanced computation technology, the integration of digital computation with neuromorphic computation into a single physical platform holds the advantage of a precise, deterministic, fast data process as well as the advantage of a flexible, paralleled, fault-tolerant data process. Even though two-terminal memristive devices have been respectively proved as leading electronic elements for digital computation and neuromorphic computation, it is difficult to steadily maintain both sudden-state-change and gradual-state-change in a single device due to the entirely different operating mechanisms. In this work, we developed a digital-analog compatible memristive device, namely, binary electronic synapse, through realizing controllable cation drift in a memristive layer. The devices feature nonvolatile binary memory as well as artificial neuromorphic plasticity with high operation endurance. With strong nonlinearity in switching dynamics, binary switching, neuromorphic plasticity, two-dimension information store, and trainable memory can be implemented by a single device.en_US
dc.description.sponsorshipThis research was supported by the National Key Research and Development Program of China (2016YFB0401305) and the National Natural Science Foundation of China (U1605244). This work was financially supported by Fuzhou University (GXRC-19032). This research was also supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2019R1A2B5B03069968).en_US
dc.language.isoenen_US
dc.publisherAMER CHEMICAL SOCen_US
dc.subjectbinary electronic synapseen_US
dc.subjectmemristive deviceen_US
dc.subjectdigital computationen_US
dc.subjectneuromorphic computationen_US
dc.subjectcation driften_US
dc.titleBinary Electronic Synapses for Integrating Digital and Neuromorphic Computation in a Single Physical Platformen_US
dc.typeArticleen_US
dc.relation.no14-
dc.relation.volume12-
dc.identifier.doi10.1021/acsami.0c02145-
dc.relation.page17130-17138-
dc.relation.journalACS APPLIED MATERIALS & INTERFACES-
dc.contributor.googleauthorWu, Chaoxing-
dc.contributor.googleauthorZhang, Yongai-
dc.contributor.googleauthorZhou, Xiongtu-
dc.contributor.googleauthorLi, Dianlun-
dc.contributor.googleauthorPark, Jae Hyeon-
dc.contributor.googleauthorAn, Haoqun-
dc.contributor.googleauthorSung, Sihyun-
dc.contributor.googleauthorLin, Jintang-
dc.contributor.googleauthorGuo, Tailiang-
dc.contributor.googleauthorKim, Tae Whan-
dc.relation.code2020051325-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidtwk-
dc.identifier.orcidhttp://orcid.org/0000-0001-6899-4986-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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