Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김태환 | - |
dc.date.accessioned | 2021-05-24T07:54:18Z | - |
dc.date.available | 2021-05-24T07:54:18Z | - |
dc.date.issued | 2020-03 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v. 12, no. 14, page. 17130-17138 | en_US |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.issn | 1944-8252 | - |
dc.identifier.uri | https://pubs.acs.org/doi/10.1021/acsami.0c02145 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/162316 | - |
dc.description.abstract | As a promising advanced computation technology, the integration of digital computation with neuromorphic computation into a single physical platform holds the advantage of a precise, deterministic, fast data process as well as the advantage of a flexible, paralleled, fault-tolerant data process. Even though two-terminal memristive devices have been respectively proved as leading electronic elements for digital computation and neuromorphic computation, it is difficult to steadily maintain both sudden-state-change and gradual-state-change in a single device due to the entirely different operating mechanisms. In this work, we developed a digital-analog compatible memristive device, namely, binary electronic synapse, through realizing controllable cation drift in a memristive layer. The devices feature nonvolatile binary memory as well as artificial neuromorphic plasticity with high operation endurance. With strong nonlinearity in switching dynamics, binary switching, neuromorphic plasticity, two-dimension information store, and trainable memory can be implemented by a single device. | en_US |
dc.description.sponsorship | This research was supported by the National Key Research and Development Program of China (2016YFB0401305) and the National Natural Science Foundation of China (U1605244). This work was financially supported by Fuzhou University (GXRC-19032). This research was also supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2019R1A2B5B03069968). | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER CHEMICAL SOC | en_US |
dc.subject | binary electronic synapse | en_US |
dc.subject | memristive device | en_US |
dc.subject | digital computation | en_US |
dc.subject | neuromorphic computation | en_US |
dc.subject | cation drift | en_US |
dc.title | Binary Electronic Synapses for Integrating Digital and Neuromorphic Computation in a Single Physical Platform | en_US |
dc.type | Article | en_US |
dc.relation.no | 14 | - |
dc.relation.volume | 12 | - |
dc.identifier.doi | 10.1021/acsami.0c02145 | - |
dc.relation.page | 17130-17138 | - |
dc.relation.journal | ACS APPLIED MATERIALS & INTERFACES | - |
dc.contributor.googleauthor | Wu, Chaoxing | - |
dc.contributor.googleauthor | Zhang, Yongai | - |
dc.contributor.googleauthor | Zhou, Xiongtu | - |
dc.contributor.googleauthor | Li, Dianlun | - |
dc.contributor.googleauthor | Park, Jae Hyeon | - |
dc.contributor.googleauthor | An, Haoqun | - |
dc.contributor.googleauthor | Sung, Sihyun | - |
dc.contributor.googleauthor | Lin, Jintang | - |
dc.contributor.googleauthor | Guo, Tailiang | - |
dc.contributor.googleauthor | Kim, Tae Whan | - |
dc.relation.code | 2020051325 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | twk | - |
dc.identifier.orcid | http://orcid.org/0000-0001-6899-4986 | - |
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