The effect of plasma exposure and annealing atmosphere on shallow junction formation using plasma source ion implantation
- Title
- The effect of plasma exposure and annealing atmosphere on shallow junction formation using plasma source ion implantation
- Author
- 김옥경
- Keywords
- Plasma source ion implantation (PSII); Recoil implantation; Out-diffusion; Ultra-shallow junction
- Issue Date
- 2002-06
- Publisher
- ELSEVIER SCIENCE SA
- Citation
- Surface and Coatings Technology, v. 157, issue. 1, page. 19-25
- Abstract
- The effect of recoil-implantation and out-diffusion in plasma source ion implantation (PSII) on ultra-shallow p+/n junction formation has been studied. Because the wafer is directly exposed to plasma, diborane radicals in the plasma can be adsorbed on the wafer surface. The amount of recoil-implanted boron as an additive dose was measured. In the annealing process, increasing the nitrogen pressure from vacuum to 360 torr, decreased the boron out-diffusion. In addition, increasing the annealing time rendered the boron out- and in-diffusion severe. Considering recoil implantation, the wafers were implanted with a dose of 1.98×1015 atoms/cm2. The as-implanted wafers were subsequently spike-annealed at 1000 °C in nitrogen ambient. With implant energy of 0.5 and 1 keV, ultra-shallow junction depths of 360 and 380 Å, respectively, could be acquired. In addition, sheet resistance of 420 and 373 Ω/□ were obtained, respectively. This junction depth and sheet resistance prepared by PSII was found to satisfy next-generation memory-device doping technology.
- URI
- https://www.sciencedirect.com/science/article/pii/S0257897202001408https://repository.hanyang.ac.kr/handle/20.500.11754/156995
- ISSN
- 0257-8972
- DOI
- 10.1016/S0257-8972(02)00140-8
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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