Resist Pattern Collapse with Top Rounding Resist Profile

Abstract

The pattern size is reduced as the device is more integrated. The resist deformation phenomenon has been a serious problem for under 100 nm line width patterns. In this study, a simulation tool for pattern collapse is created by using the existing beam sway model, and the effects of resist profile that exert on the pattern collapse have been studied. The simulated results show that the pattern collapse phenomenon is reduced for the top rounding resist profile rather than for vertical profiles.