Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 오혜근 | - |
dc.date.accessioned | 2020-10-26T05:59:05Z | - |
dc.date.available | 2020-10-26T05:59:05Z | - |
dc.date.issued | 2003-02 | - |
dc.identifier.citation | 이학기술연구지, v.,6 Page.83-88 | en_US |
dc.identifier.issn | 2005-9051 | - |
dc.identifier.uri | https://www.earticle.net/Article/A106132 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/154924 | - |
dc.description.abstract | High aspect ratio resist patterns with dimensions below 100 nm often bend, break or tear. These phenomena are generically called "resist pattern collapse". Pattern collapse is a very serious problem in fine patterning of less than 100 nm critical dimension (CD), so that it decreases the yield. In order to mechanically analyze this phenomenon and create its simulator, two models have been made and compared. In this paper, various approaches with various analyses are made to understand pattern collapse. Also, the critical aspect ratio for 100 nm node, that determines whether pattern collapse happens or not, can be calculated with these approaches. Finally, tear type caused by insufficiency of adhesion strength between the substrate and the resist is analyzed with a point of view of the surface free energy. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | 한양대학교 이학기술연구소 | en_US |
dc.title | Simulation of Complex Resist Pattern Collapse with Mechanical Modeling | en_US |
dc.title.alternative | 복합적인 레지스트 패턴 붕괴현상의 역학적 해석 | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1117/12.485048 | - |
dc.contributor.googleauthor | 이형주 | - |
dc.contributor.googleauthor | 박준택 | - |
dc.contributor.googleauthor | 안일신 | - |
dc.contributor.googleauthor | 김옥경 | - |
dc.contributor.googleauthor | 오혜근 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E] | - |
dc.sector.department | DEPARTMENT OF APPLIED PHYSICS | - |
dc.identifier.pid | hyekeun | - |
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