Repository at Hanyang UniversityCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학)PHOTONICS AND NANOELECTRONICS(나노광전자학과)Articles
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전류차단층의 기생효과 해석
- Title
- 전류차단층의 기생효과 해석
- Author
- 심종인
- Issue Date
- 2003-02
- Publisher
- Optical Society of Korea
- Citation
- 한국광학회 제14회 정기총회 및 2003년도 동계학술발표회 논문집, Page.148-149
- Abstract
- The parasitic effects due to the current blocking layer limit the bandwidth of the semiconductor laser diode. Thus, the parasitic response of various blocking layers was analyzed. The inin type was the best choice for the leakage current reduction and the bandwidth expansion.
- URI
- http://www.dbpia.co.kr/journal/articleDetail?nodeId=NODE00649356https://repository.hanyang.ac.kr/handle/20.500.11754/154909
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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