A Numerical Study on the Growth and Composition of InGaAsP Film in a Horizontal MOCVD Reactor
- Title
- A Numerical Study on the Growth and Composition of InGaAsP Film in a Horizontal MOCVD Reactor
- Author
- 김우승
- Keywords
- metalorganic chemical vapor deposition (MOCVD); InGaAsP; numerical simulation
- Issue Date
- 2004-12
- Publisher
- IEEE
- Citation
- Conference on Optoelectronic and Microelectronic Materials and Devices, 2004.
- Abstract
- Distribution of growth rate and composition of
InGaAsP films along the reactor length direction grown by
metalorganic chemical vapor deposition process were studied
using computational methods. The influences of process
parameters such as pressure, temperature and precursors inlet
partial pressures on the growth rate and composition
distributions are analyzed. Trimethyl-indium, trimethyl-gallium,
tertiary-butylarsine and tertiary-butylphosphine were used as
precursors and hydrogen as dilution gas. The reaction model
includes 4 gas-phase reactions and 8 surface reactions.
Predicted values of the growth rate and composition were
compared to the experimental results to validate the numerical
model. The influences of heater temperature and operating
pressure were analyzed thereafter.
- URI
- https://ieeexplore.ieee.org/document/1577502?arnumber=1577502&SID=EBSCO:edseeehttps://repository.hanyang.ac.kr/handle/20.500.11754/154773
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MECHANICAL ENGINEERING(기계공학과) > Articles
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML