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dc.contributor.author오혜근-
dc.date.accessioned2020-09-29T00:00:10Z-
dc.date.available2020-09-29T00:00:10Z-
dc.date.issued2004-12-
dc.identifier.citation이학기술연구지, v.7, Page.65-72en_US
dc.identifier.urihttp://www.riss.kr/search/detail/DetailView.do?p_mat_type=1a0202e37d52c72d&control_no=eba233dd0b936d5bffe0bdc3ef48d419&outLink=N-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/154206-
dc.description.abstractSimulation has been used to predict aerial images for masks with defect-free multilayer and with defect in multilayer. Mask defects are easily produced in an extreme-ultraviolet lithography mask fabrication process, because 80 Mo/si multilayer films are stacked and each stack is made from 2 to 4㎚. In this case, the multilayer can be stacked with defects and with slightly different heights. It is difficult to achieve an aerial image which is desired. This paper discusses various image properties when there is no defect and when there are different kinds of defects in the multilayer. The results are calculated by using SOLE-EUV of Simga-C. A finite-difference time-domain algorithm is used, and the aerial images caused by defects in the multilayer are also characterized.en_US
dc.language.isoen_USen_US
dc.publisher한양대학교 이학기술연구소en_US
dc.title극자외선 리소그래피에서 마스크 결함에 의한 이미지 특징en_US
dc.title.alternativeAerial Image Characterization for Defects in an Extreme-Ultraviolet Masken_US
dc.typeArticleen_US
dc.relation.journal이학기술연구지-
dc.contributor.googleauthor유명슬-
dc.contributor.googleauthor박승욱-
dc.contributor.googleauthor김옥경-
dc.contributor.googleauthor오혜근-
dc.relation.code2012101941-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF APPLIED PHYSICS-
dc.identifier.pidhyekeun-
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COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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