Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2020-07-23T02:42:52Z | - |
dc.date.available | 2020-07-23T02:42:52Z | - |
dc.date.issued | 2019-07 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v. 40, no. 7, Page. 1128-1131 | en_US |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.issn | 1558-0563 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/8730370 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/151849 | - |
dc.description.abstract | Prior research has reported that the device characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) have been changed by instabilities due to electrical stress. Because positive bias stress and high current stress produce a positive threshold voltage shift, if the digital logic circuit is designed using a-IGZO TFTs, there is a high possibility that the circuit suffers from malfunction. In this letter, the dynamic and the static logic circuits using n-type a-IGZO TFTs are compared in terms of stability for electrical stress. In order to compare the stability of the two circuits, DC and AC signals are applied. The measurement results suggest that the dynamic logic circuit is much more stable than the static logic circuit regarding electrical stress. | en_US |
dc.description.sponsorship | This work was supported in part by the Ministry of Trade, Industry and Energy (MOTIE) under Project 10052020 and in part by the Korea Display Research Corporation (KDRC) Support Program for the development of future devices technology for display industry. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | Amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) | en_US |
dc.subject | electrical stress | en_US |
dc.subject | dynamic logic | en_US |
dc.subject | logic circuits | en_US |
dc.subject | TFTs | en_US |
dc.title | Electrical Stability Analysis of Dynamic Logic Using Amorphous Indium-Gallium-Zinc-Oxide TFTs | en_US |
dc.type | Article | en_US |
dc.relation.no | 7 | - |
dc.relation.volume | 40 | - |
dc.identifier.doi | 10.1109/LED.2019.2920634 | - |
dc.relation.page | 1128-1131 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.contributor.googleauthor | Kim, Yong-Duck | - |
dc.contributor.googleauthor | Kim, Jong-Seok | - |
dc.contributor.googleauthor | Lee, Jong-Il | - |
dc.contributor.googleauthor | Han, Ki-Lim | - |
dc.contributor.googleauthor | Kim, Beom-Su | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.contributor.googleauthor | Choi, Byong-Deok | - |
dc.relation.code | 2019003487 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
dc.identifier.orcid | https://orcid.org/0000-0002-9070-5666 | - |
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