Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박원일 | - |
dc.date.accessioned | 2020-05-25T06:24:04Z | - |
dc.date.available | 2020-05-25T06:24:04Z | - |
dc.date.issued | 2019-09 | - |
dc.identifier.citation | JOURNAL OF ALLOYS AND COMPOUNDS, v. 803, Page. 826-833 | en_US |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.issn | 1873-4669 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0925838819324727?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/151375 | - |
dc.description.abstract | InGaN/GaN micro-crystals (mu-crystals) are self-contained and individually-addressable light emitting crystals that have unique potential in the development of ultra-small and ultra-high resolution pixels for next-generation displays. In this study, we explore the electrically-driven light emission behavior of vertically standing InGaN/GaN micro-crystals (mu-crystals) with well-defined crystal facets and tunable size. InGaN/GaN mu-crystals have hollow pedestals weakly bound to the substrate surface, thus enabling individual manipulation and/or collective transfer to other target surfaces. Cyclic bending tests and finite element analysis (FEA) of the strain distribution further highlight the excellent mechanical deformability of a device layout consisting of mu-crystal pixels embedded in a polymeric matrix. Light-emitting diodes (LEDs) with individual InGaN/GaN mu-crystals exhibit strong electroluminescence (EL) with unique features such as variations in emission spectra with respect to crystal diameter and driving voltage bias. Comparative analyses of photoluminescence, cathodoluminescence, and electric potential simulation indicate a strong correlation between the EL wavelengths and dominant emitting regions of InGaN/GaN polyhedral crystal planes. This is further supported by scanning transmission electron microscopy of quantum well structures, which strongly depend on both size and the crystal facets. (C) 2019 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | This work was supported by the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning of Korea (Nos. 2018R1A2B2006410, 2016K1A4A3914691) and the AFOSR/AOARD, USA (FA2386-18-1-4110). G.-C.Yi acknowledges this work supported by the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning of Korea (2015K1A1A2033332). | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCIENCE SA | en_US |
dc.subject | GaN | en_US |
dc.subject | Micro-LED | en_US |
dc.subject | Flexible LED | en_US |
dc.subject | Multi-color emission | en_US |
dc.subject | MOCVD | en_US |
dc.title | Self-contained InGaN/GaN micro-crystal arrays as individually addressable multi-color emitting pixels on a deformable substrate | en_US |
dc.type | Article | en_US |
dc.relation.volume | 803 | - |
dc.identifier.doi | 10.1016/j.jallcom.2019.06.374 | - |
dc.relation.page | 826-833 | - |
dc.relation.journal | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.contributor.googleauthor | Yang, Dong Won | - |
dc.contributor.googleauthor | Lee, Keundong | - |
dc.contributor.googleauthor | Jang, Suhee | - |
dc.contributor.googleauthor | Chang, Won Jun | - |
dc.contributor.googleauthor | Kim, Su Han | - |
dc.contributor.googleauthor | Lee, Jae Hyung | - |
dc.contributor.googleauthor | Yi, Gyu-Chul | - |
dc.contributor.googleauthor | Park, Won Il | - |
dc.relation.code | 2019001568 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | wipark | - |
dc.identifier.orcid | https://orcid.org/0000-0001-8312-4815 | - |
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