Repository at Hanyang UniversityCOLLEGE OF ENGINEERING SCIENCES[E](공학대학)ELECTRICAL ENGINEERING(전자공학부)Articles
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dc.contributor.author어영선-
dc.date.accessioned2020-04-22T10:03:22Z-
dc.date.available2020-04-22T10:03:22Z-
dc.date.issued2004-07-
dc.identifier.citationELECTRONICS LETTERS, v.40, No. 15en_US
dc.identifier.issn0013-5194-
dc.identifier.urihttps://ieeexplore.ieee.org/abstract/document/1318879/authors#authors-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/151197-
dc.description.abstractA buried heterostructure based on Fe-doped InP semi-insulating layers is optimised for both high output power and large modulation bandwidth operations up to 70degreesC in a 10 Gbit/s directly modulated 1.3 mum lnGaAsP/InP distributed feedback laser. The slope efficiency of 0.19 W/A and -3 dB bandwidth of 10 GHz at 1.5 times threshold cur-rent is demonstrated experimentally.en_US
dc.language.isoen_USen_US
dc.publisherIETen_US
dc.subjectBLOCKING LAYERSen_US
dc.subjectLEAKAGE CURRENTen_US
dc.titleFe-doped InP semi-insulating buried heterostructure for high speed and high power operations in directly modulated semiconductor laseren_US
dc.typeArticleen_US
dc.identifier.doi10.1049/el:20045467-
dc.relation.journalELECTRONICS LETTERS-
dc.contributor.googleauthorKim, D-
dc.contributor.googleauthorShim, J-
dc.contributor.googleauthorJang, D-
dc.contributor.googleauthorEo, Y-
dc.relation.code2009202795-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF ENGINEERING SCIENCES[E]-
dc.sector.departmentDIVISION OF ELECTRICAL ENGINEERING-
dc.identifier.pideo-
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