Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 송윤흡 | - |
dc.date.accessioned | 2020-04-17T02:24:47Z | - |
dc.date.available | 2020-04-17T02:24:47Z | - |
dc.date.issued | 2019-04 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v. 66, NO 4, Page. 1783-1788 | en_US |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.issn | 1557-9646 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/8653874 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/151095 | - |
dc.description.abstract | The structural, chemical, and electrical properties of amorphous indium gallium zinc oxide (a-IGZO) films by magnetron sputtering and atomic layer deposition (ALD) were investigated where both a-IGZO films had a comparable cation composition. The ALD-derived a-IGZO film exhibited the higher atomic packing density, the effective suppression of trap-like oxygen vacancy defect (VO), and the enhancement in the hybridization of the sp orbital of In, Ga, and Zn cations compared to those of the sputtered a-IGZO film. Hence, a significant improvement in terms of the field-effect mobility was observed for the thin-film transistors with an In0.50Ga0.34Zn0.16O channel by ALD (36.6 cm(2)/V.s) compared to that of the sputtered In0.48Ga0.38Zn0.14O transistor (20.1 cm(2)/V.s); the I-ON/OFF ratios for both were similar to 10(7). Simultaneously, the gate bias stress stability and photobias stress stability were also improved for the IGZO transistors with an ALD-derived channel, which can be explained by its reduced trap-like VO density. | en_US |
dc.description.sponsorship | This work was supported in part by the LG Display Company and in part by Ministry of Knowledge Economy(MKE)/Korea Evaluation Institute of Industrial Technology(KEIT) through the Industrial Strategic Technology Development Program under Grant 10080689. The review of this paper was arranged by Editor J. Huang. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | Atomic layer deposition (ALD) | en_US |
dc.subject | indium gallium zinc oxide (IGZO) | en_US |
dc.subject | sputtering | en_US |
dc.subject | thin-film transistors (TFTs) | en_US |
dc.title | Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel Layer | en_US |
dc.type | Article | en_US |
dc.relation.no | 4 | - |
dc.relation.volume | 66 | - |
dc.identifier.doi | 10.1109/TED.2019.2899586 | - |
dc.relation.page | 1783-1788 | - |
dc.relation.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.contributor.googleauthor | Cho, Min Hoe | - |
dc.contributor.googleauthor | Seol, Hyunju | - |
dc.contributor.googleauthor | Song, Aeran | - |
dc.contributor.googleauthor | Choi, Seonjun | - |
dc.contributor.googleauthor | Song, Yunheub | - |
dc.contributor.googleauthor | Yun, Pil Sang | - |
dc.contributor.googleauthor | Chung, Kwun-Bum | - |
dc.contributor.googleauthor | Bae, Jong Uk | - |
dc.contributor.googleauthor | Park, Kwon-Shik | - |
dc.contributor.googleauthor | Jeong, Jae Kyeong | - |
dc.relation.code | 2019000238 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | yhsong2008 | - |
dc.identifier.orcid | https://orcid.org/0000-0001-5402-6765 | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.