The Effects of Mechanical Properties of Polishing Pads on Oxide CMP(Chemical Mechanical Planarization)
- Title
- The Effects of Mechanical Properties of Polishing Pads on Oxide CMP(Chemical Mechanical Planarization)
- Author
- 박진구
- Keywords
- Chemical mechanical planarization (CMP); laser process; pad; holes; groove pattern; elastic modulus; hardness
- Issue Date
- 2004-06
- Publisher
- 한국트라이볼로지학회
- Citation
- KSTLE International Journal, v. 5, No. 1, Page. 32-35
- Abstract
- The purpose of this study is to investigate the effects of the structure and mechanical properties of laser-processed pads on their polishing behavior such as their removal rate and WIWNU (within wafer non-uniformity) during the chemical mechanical planarization (CMP) process. The holes on the pad acted as the reservoir of slurry particles and enhanced the removal rate. Without grooves, no effective removal of wafers was possible. When the length of the circular-type grooves was increased, higher removal rates and lower wafer non-uniformity were measured. The removal rate and non-uniformity linearly increased as the elastic modulus of the top pad increased. Higher removal rates and lower non-uniformity were measured as the hardness of the pad increased.
- URI
- http://koreascience.or.kr/article/JAKO200411923048270.pagehttps://repository.hanyang.ac.kr/handle/20.500.11754/149395
- ISSN
- 1229-9189
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML