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dc.contributor.author박완준-
dc.date.accessioned2020-03-26T05:01:34Z-
dc.date.available2020-03-26T05:01:34Z-
dc.date.issued2019-03-
dc.identifier.citationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 19, NO 3, Page. 1585-1591en_US
dc.identifier.issn1533-4880-
dc.identifier.issn1533-4899-
dc.identifier.urihttps://www.ingentaconnect.com/content/asp/jnn/2019/00000019/00000003/art00061-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/139480-
dc.description.abstractIn this work, we propose a stretchable graphene film sensor that can detect all of lateral and vertical strain with unique architecture in single sensor element since most approaches so far are only available for detecting either lateral or vertical strain, but not both. The sensor is fabricated with percolative networks of graphene nanoplatelet using spray-coating method for constructing strain sensing channel and electrode simultaneously. The sensor exhibits a high stretchability of 150% with a gauge factor of 8.56 (0-100%) and 19.8 (100-150%) in the two regimes, for lateral strain. The sensor also presents a high sensitivity ((Delta R/R-0) / Delta P of -0.026 kPa(-1)) for vertically applied pressure in the range of 100-20,000 Pa, belonging to general human pressure perception range. Based on the sensing properties demonstrated, the proposed graphene sensor is a promising candidate for sensor that can detect both lateral and vertical strains in single sensor element.en_US
dc.description.sponsorshipThis work was supported by the National Research Foundation of Korea (2017M3A9F1027917).en_US
dc.language.isoenen_US
dc.publisherAMER SCIENTIFIC PUBLISHERSen_US
dc.subjectGrapheneen_US
dc.subjectGraphene Thin-Filmen_US
dc.subjectFlexible Transduceren_US
dc.subjectGraphene Pressure Sensorsen_US
dc.subjectGraphene Strain Sensorsen_US
dc.subjectGraphene Nanoplatelet (GNP)en_US
dc.titleA Stretchable Graphene Thin-Film Sensor for Detecting All of Lateral and Vertical Strainsen_US
dc.typeArticleen_US
dc.relation.no3-
dc.relation.volume19-
dc.identifier.doi10.1166/jnn.2019.16261-
dc.relation.page1585-1591-
dc.relation.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.contributor.googleauthorChun, Sungwoo-
dc.contributor.googleauthorSon, Wonkyeong-
dc.contributor.googleauthorPark, Wanjun-
dc.relation.code2019037685-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidwanjun-
dc.identifier.researcherIDK-6897-2018-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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