Microstructural analysis of Ga1-xMnxN films grown by PEMBE

Abstract

The microstructural changes of Ga1−xMnxN films grown at various substrate temperatures (350–700°C) by a PEMBE system have been investigated using transmission electron microscopy. Ga1−xMnxN film with low dislocation density was grown epitaxially at 700°C but dislocation density increased with the decrease of substrate temperature. Moreover, HCP and FCC structures coexisted in the vicinity of interface between GaN and Ga1−xMnxN films grown below 450°C.