Photo-thermoelectric properties of SnS nanocrystals with orthorhombic layered structure
- Title
- Photo-thermoelectric properties of SnS nanocrystals with orthorhombic layered structure
- Author
- 안지훈
- Issue Date
- 2017-07
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v. 111, No. 1, Article no. 013104
- Abstract
- The photo-thermoelectric properties of SnS nanocrystals, two-dimensional materials with an orthorhombic symmetry, were investigated using a focused laser scanning method. The SnS nanocrystals were synthesized by a vapor transport method, and their fundamental material and electrical properties were investigated. Upon shining a laser onto the SnS channel region under a positive source-drain bias, a positive photocurrent was observed due to photo-excited electron-hole pairs. On the other hand, when this external electric field was not applied, a strong photocurrent was observed within the metal electrode region rather than at the metal-semiconductor interface, which indicated that the major mechanism for the photocurrent under zero external bias was a photo-induced thermoelectric effect rather than a photovoltaic effect. Moreover, the Seebeck coefficient of the SnS nanocrystal device was approximately 1735 mu V/K, which is 3.5 times larger than that of its bulk counterpart. Published by AIP Publishing.
- URI
- https://aip.scitation.org/doi/full/10.1063/1.4992115https://repository.hanyang.ac.kr/handle/20.500.11754/121644
- ISSN
- 0003-6951; 1077-3118
- DOI
- 10.1063/1.4992115
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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