Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김재균 | - |
dc.date.accessioned | 2019-12-19T01:59:44Z | - |
dc.date.available | 2019-12-19T01:59:44Z | - |
dc.date.issued | 2019-01 | - |
dc.identifier.citation | SCIENTIFIC REPORTS, v. 9, Article no. 970 | en_US |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://www.nature.com/articles/s41598-019-38664-x | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/121345 | - |
dc.description.abstract | The nature of reverse leakage current characteristics in InGaN/GaN blue light emitting diodes (LEDs) on freestanding GaN crystals detached from a Si substrate is investigated for the first time, using temperature-dependent current-voltage (T-I-V) measurement. It is found that the Si-based homoepitaxial InGaN/GaN LEDs exhibit a significant suppression of the reverse leakage current without any additional processes. Their conduction mechanism can be divided into variable-range hopping and nearest neighbor hopping (NNH) around 360 K, which is enhanced by Poole-Frenkel emission. The analysis of T-I-V curves of the homoepitaxial LEDs yields an activation energy of carriers of 35 meV at -10 V, about 50% higher than that of the conventional ones (E-a = 21 meV at -10 V). This suggests that our homoepitaxial InGaN/GaN LEDs bears the high activation energy as well as low threading dislocation density (about 1 x 10(6)/cm(2)), effectively suppressing the reverse leakage current. We expect that this study will shed a light on the high reliability and carrier tunneling characteristics of the homoepitaxial InGaN/GaN blue LEDs produced from a Si substrate and also envision a promising future for their successful adoption by LED community via cost-effective homoepitaxial fabrication of LEDs. | en_US |
dc.description.sponsorship | This work was supported by the research fund of Hanyang University (HY-2017-N) and the Korea Basic Science Institute research Grant No. C38116. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | NATURE PUBLISHING GROUP | en_US |
dc.title | Significant improvement of reverse leakage current characteristics of Si-based homoepitaxial InGaN/GaN blue light emitting diodes | en_US |
dc.type | Article | en_US |
dc.relation.volume | 9 | - |
dc.identifier.doi | 10.1038/s41598-019-38664-x | - |
dc.relation.page | 1-6 | - |
dc.relation.journal | SCIENTIFIC REPORTS | - |
dc.contributor.googleauthor | Lee, Moonsang | - |
dc.contributor.googleauthor | Lee, Hyun Uk | - |
dc.contributor.googleauthor | Song, Keun Man | - |
dc.contributor.googleauthor | Kim, Jaekyun | - |
dc.relation.code | 2019002548 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E] | - |
dc.sector.department | DEPARTMENT OF PHOTONICS AND NANOELECTRONICS | - |
dc.identifier.pid | jaekyunkim | - |
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