Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 안진호 | - |
dc.date.accessioned | 2019-12-10T19:41:13Z | - |
dc.date.available | 2019-12-10T19:41:13Z | - |
dc.date.issued | 2018-12 | - |
dc.identifier.citation | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v. 88, page. 207-213 | en_US |
dc.identifier.issn | 1369-8001 | - |
dc.identifier.issn | 1873-4081 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S1369800118311016?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/121110 | - |
dc.description.abstract | We investigated the effects of hydrogen annealing temperature on Pt/HfOx/Pt resistive switching memory devices. Memory devices annealed in a hydrogen environment exhibited unipolar resistive switching behaviors with low set, reset, and forming voltages owing to reduction of the HfOx film by the injected hydrogen. The devices annealed at 400 degrees C exhibited good endurance, lasting 7 times as long as non-annealed device. This improvement could be attributed to the generation of more oxygen vacancies in HfOx, which resulted in more conducing pathways forming during the resistive switching process. The devices annealed in the hydrogen environment also showed longer retention times than those of non-annealed devices. Therefore, hydrogen annealing improves the performance of this nonvolatile switching memory by enabling low power operation at lower operation voltages with greater reliability. | en_US |
dc.description.sponsorship | This work was supported by Basic Science Research Program (2012R1A6A1029029), Nano Material Technology Development Program (2016M3A7B4910429), and Creative Materials Discovery Program on Creative Multilevel Research Center (2015M3D1A1068061) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education and the Ministry of Science and ICT. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ELSEVIER SCI LTD | en_US |
dc.subject | Hydrogen annealing | en_US |
dc.subject | Resistive switching | en_US |
dc.subject | Oxygen vacancy | en_US |
dc.subject | Conducting filament | en_US |
dc.title | Effects of hydrogen annealing temperature on the resistive switching characteristics of HfOx thin films | en_US |
dc.type | Article | en_US |
dc.relation.volume | 88 | - |
dc.identifier.doi | 10.1016/j.mssp.2018.08.013 | - |
dc.relation.page | 207-213 | - |
dc.relation.journal | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | - |
dc.contributor.googleauthor | Jung, Yong Chan | - |
dc.contributor.googleauthor | Seong, Sejong | - |
dc.contributor.googleauthor | Lee, Taehoon | - |
dc.contributor.googleauthor | Kim, Seon Yong | - |
dc.contributor.googleauthor | Park, In-Sung | - |
dc.contributor.googleauthor | Ahn, Jinho | - |
dc.relation.code | 2018001203 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jhahn | - |
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