Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 정재경 | - |
dc.date.accessioned | 2019-12-10T05:22:12Z | - |
dc.date.available | 2019-12-10T05:22:12Z | - |
dc.date.issued | 2018-11 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v. 65, no. 11, page. 4854-4860 | en_US |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.issn | 1557-9646 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/8467548 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/120770 | - |
dc.description.abstract | The effects of chamber pressure (P-C) on the structural and chemical properties of an indium gallium tin oxide (IGTO) channel layer were examined. Smoother and denser IGTO films were obtained with decreasing P-C, which were explained based on the enhanced kinetic energy of sputtered particles due to fewer collisions with the plasma atmosphere. The resulting IGTO thin-film transistor exhibited a high mobility of 35.0 cm(2)/Vs, subthreshold gate swing of 0.17 V/decade, threshold voltage (V-TH) of -0.45 V, and I-ON/OFF ratio >10(8), even at a low annealing temperature of 150 degrees C. | en_US |
dc.description.sponsorship | This work was supported in part by Samsung Display and in part by MKE/KEIT through the Industrial Strategic Technology Development Program under Grant 10079974. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | Densification | en_US |
dc.subject | indium gallium tin oxide (IGTO) | en_US |
dc.subject | low temperature | en_US |
dc.subject | mobility | en_US |
dc.subject | sputtering | en_US |
dc.subject | thin-film transistor (TFT) | en_US |
dc.title | Achieving High Mobility in IGTO Thin-Film Transistors at a Low Temperature via Film Densification | en_US |
dc.type | Article | en_US |
dc.relation.no | 11 | - |
dc.relation.volume | 65 | - |
dc.identifier.doi | 10.1109/TED.2018.2868697 | - |
dc.relation.page | 4854-4860 | - |
dc.relation.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.contributor.googleauthor | Kim, Hyeon-A | - |
dc.contributor.googleauthor | Kim, Jeong Oh | - |
dc.contributor.googleauthor | Hur, Jae Seok | - |
dc.contributor.googleauthor | Son, Kyoung-Seok | - |
dc.contributor.googleauthor | Lim, Jun Hyung | - |
dc.contributor.googleauthor | Cho, Johann | - |
dc.contributor.googleauthor | Jeong, Jae Kyeong | - |
dc.relation.code | 2018003012 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | jkjeong1 | - |
dc.identifier.orcid | https://orcid.org/0000-0003-3857-1039 | - |
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