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dc.contributor.author박진섭-
dc.date.accessioned2019-12-10T01:19:47Z-
dc.date.available2019-12-10T01:19:47Z-
dc.date.issued2018-11-
dc.identifier.citationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, v. 33, no. 12, Article no. 125018en_US
dc.identifier.issn0268-1242-
dc.identifier.issn1361-6641-
dc.identifier.urihttps://iopscience.iop.org/article/10.1088/1361-6641/aaeb78-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/120571-
dc.description.abstractIn this paper, we report on an ultraviolet (UV) photodetector based on a pn junction structure hollow anatase n-TiO2 nanosphere monolayer film on a p-GaN template. In order to form and transfer the well-arrayed hollow TiO2 nanosphere monolayer film onto polydimethylsiloxane (PDMS), a facile rubbing method and polyvinyl alcohol (PVA) aqueous solution was used. To investigate the effects of different-sized hollow TiO2 nanospheres, anatase-TiO2 spheres of various diameters were prepared by combining template synthesis and thermal treatment. The responsiveness of the fabricated UV photodetectors using anatase n-TiO2 monolayer/p-GaN was increased from 0.17 to 0.21 A W-1 upon reducing the size of the anatase-phased hollow n-TiO2 spheres from 660 to 360 nm. Our suggested transferable anatase-TiO2 monolayer film is a new n-type single-layer material for electronic and optical device fields developed through the universal usage of displaceable material for targeted hetero-templates.en_US
dc.description.sponsorshipThis research was supported by the Basic Science Research Program of the National Research Foundation of Korea (NRF), funded by the Ministry of Education, Science, and Technology (NRF-2018R1D1A1B07048382).en_US
dc.language.isoen_USen_US
dc.publisherIOP PUBLISHING LTDen_US
dc.subjectn-TiO2en_US
dc.subjectphotodetectoren_US
dc.subjectnanosphere monolayeren_US
dc.subjecttransferable filmen_US
dc.titleFabrication of n-TiO2 hollow spheres monolayer-based UV detectors with different-sized nanospheresen_US
dc.typeArticleen_US
dc.relation.no12-
dc.relation.volume33-
dc.identifier.doi10.1088/1361-6641/aaeb78-
dc.relation.page1-20-
dc.relation.journalSEMICONDUCTOR SCIENCE AND TECHNOLOGY-
dc.contributor.googleauthorYang, Taeyoung-
dc.contributor.googleauthorShin, Dong Su-
dc.contributor.googleauthorYu, Jiyeon-
dc.contributor.googleauthorJi, Yuexing-
dc.contributor.googleauthorKim, Taek Gon-
dc.contributor.googleauthorDayakar, T.-
dc.contributor.googleauthorPark, Jinsub-
dc.relation.code2018001645-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidjinsubpark-
dc.identifier.orcidhttps://orcid.org/0000-0003-1079-5532-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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