219 144

Full metadata record

DC FieldValueLanguage
dc.contributor.author김태환-
dc.date.accessioned2019-12-08T19:40:02Z-
dc.date.available2019-12-08T19:40:02Z-
dc.date.issued2018-08-
dc.identifier.citationSCIENTIFIC REPORTS, v. 8, Article no. 12275en_US
dc.identifier.issn2045-2322-
dc.identifier.urihttps://www.nature.com/articles/s41598-018-30771-5-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/119754-
dc.description.abstractFlexible memristive devices with a structure of Al/polyimide: mica/poly(3,4-ethylenedioxythiophene) polystyrene sulfonate/indium-tin-oxide/polyethylene glycol naphthalate showed electrical bistability characteristics. The maximum current margin of the devices with mica nanosheets was much larger than that of the devices without mica nanosheets. For these devices, the current vs. time curves showed nonvolatile characteristics with a retention time of more than 1 x 10(4) s, and the current vs. number-of-cycles curves demonstrated an endurance for high resistance state/low resistance state switchings of 1 x 10(2) cycles. As to the operation performance, the "reset" voltage was distributed between 2.5 and 3 V, and the "set" voltage was distributed between -0.7 and -0.5 V, indicative of high uniformity. The electrical characteristics of the devices after full bendings with various radii of curvature were similar to those before bending, which was indicative of devices having ultra-flexibility. The carrier transport and the operation mechanisms of the devices were explained based on the current vs. voltage curves and the energy band diagrams.en_US
dc.description.sponsorshipThis research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2016R1A2A1A05005502).en_US
dc.language.isoen_USen_US
dc.publisherNATURE PUBLISHING GROUPen_US
dc.subjectMEMORYen_US
dc.subjectOXIDEen_US
dc.titleFlexible memristive devices based on polyimide: mica nanosheet nanocomposites with an embedded PEDOT: PSS layeren_US
dc.typeArticleen_US
dc.relation.volume8-
dc.identifier.doi10.1038/s41598-018-30771-5-
dc.relation.page12275-12275-
dc.relation.journalSCIENTIFIC REPORTS-
dc.contributor.googleauthorChoi, Myoung Kyun-
dc.contributor.googleauthorKim, Woo Kyum-
dc.contributor.googleauthorSung, Sihyun-
dc.contributor.googleauthorWu, Chaoxing-
dc.contributor.googleauthorKim, Hyoun Woo-
dc.contributor.googleauthorKim, Tae Whan-
dc.relation.code2018003596-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidtwk-


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE