Unique reliability characteristics of fully depleted silicon-on-insulator tunneling FET
- Title
- Unique reliability characteristics of fully depleted silicon-on-insulator tunneling FET
- Author
- 최창환
- Keywords
- FIELD-EFFECT TRANSISTORS; HOT-CARRIER STRESS; CURRENT DEGRADATION
- Issue Date
- 2018-04
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v. 57, no. 4, Article no. 04FB02
- Abstract
- This study investigated the unique reliability characteristics of tunneling field effect transistors (TFETs) by comparing the effects of positive bias temperature instability (PBTI) and hot carrier injection (HCI) stresses. In case of hot carrier injection (HCI) stress, the interface trap generation near a p/n(+) region was the primary degradation mechanism. However, strong recovery after a high-pressure hydrogen annealing and weak degradation at low temperature indicates that the degradation mechanism of TFET under the HCI stress is different from the high-energy carrier stress induced permanent defect generation mechanism observed in MOSFETs. Further study is necessary to identify the exact location and defect species causing TFET degradation; however, a significant difference is evident between the dominant reliability mechanism of TFET and MOSFET.
- URI
- https://iopscience.iop.org/article/10.7567/JJAP.57.04FB02https://repository.hanyang.ac.kr/handle/20.500.11754/118258
- ISSN
- 0021-4922; 1347-4065
- DOI
- 10.7567/JJAP.57.04FB02
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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