Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박재근 | - |
dc.date.accessioned | 2019-12-04T04:17:03Z | - |
dc.date.available | 2019-12-04T04:17:03Z | - |
dc.date.issued | 2018-01 | - |
dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 72, no. 1, page. 116-121 | en_US |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.issn | 1976-8524 | - |
dc.identifier.uri | https://link.springer.com/article/10.3938%2Fjkps.72.116 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/117121 | - |
dc.description.abstract | The Conductive-bridge random-access memory (CBRAM) cell is a promising candidate for a terabit-level non-volatile memory due to its remarkable advantages. We present for the first time TiN as a diffusion barrier in CBRAM cells for enhancing their reliability. CuO solid-electrolyte-based CBRAM cells implemented with a 0.1-nm TiN liner demonstrated better non-volatile memory characteristics such as similar to 10(6) AC write/erase endurance cycles with 100-mu s AC pulse width and a long retention time of similar to 7.4-years at 85 A degrees C. In addition, the analysis of Ag diffusion in the CBRAM cell suggests that the morphology of the Ag filaments in the electrolyte can be effectively controlled by tuning the thickness of the TiN liner. These promising results pave the way for faster commercialization of terabit-level non-volatile memories. | en_US |
dc.description.sponsorship | The authors would like to acknowledge the support of the Ministry of Higher Education, Kingdom of Saudi Arabia, for supporting this research through a grant (PCSED-007-14) under the Promising Center for Sensors and Electronic Devices (PCSED) at Najran University in Kingdom of Saudi Arabia, the Ministry of Trade, Industry & Energy (MOTIE, Korea) under Industrial Technology Innovation Program (10068055) and the Brain Korea 21 PLUS Program in 2017. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | KOREAN PHYSICAL SOC | en_US |
dc.subject | Conductive-bridge | en_US |
dc.subject | Random access memory | en_US |
dc.subject | Nanoscale device | en_US |
dc.subject | TiN liner | en_US |
dc.subject | Diffusion barrier | en_US |
dc.subject | Endurance | en_US |
dc.title | Nanoscale CuO solid-electrolyte-based conductive-bridging, random-access memory cell with a TiN liner | en_US |
dc.type | Article | en_US |
dc.relation.no | 1 | - |
dc.relation.volume | 72 | - |
dc.identifier.doi | 10.3938/jkps.72.116 | - |
dc.relation.page | 116-121 | - |
dc.relation.journal | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.contributor.googleauthor | Lee, Jong-Sun | - |
dc.contributor.googleauthor | Kim, Dong-Won | - |
dc.contributor.googleauthor | Kim, Hea-Jee | - |
dc.contributor.googleauthor | Jin, Soo-Min | - |
dc.contributor.googleauthor | Song, Myung-Jin | - |
dc.contributor.googleauthor | Kwon, Ki-Hyun | - |
dc.contributor.googleauthor | Park, Jea-Gun | - |
dc.contributor.googleauthor | Jalalah, Mohammed | - |
dc.contributor.googleauthor | Al-Hajry, Ali | - |
dc.relation.code | 2018000435 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | parkjgl | - |
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