Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 최창환 | - |
dc.date.accessioned | 2019-12-04T01:43:03Z | - |
dc.date.available | 2019-12-04T01:43:03Z | - |
dc.date.issued | 2018-01 | - |
dc.identifier.citation | SCIENTIFIC REPORTS, v. 8, Article no. 1228 | en_US |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://www.nature.com/articles/s41598-018-19575-9 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/117014 | - |
dc.description.abstract | A two terminal semiconducting device like a memristor is indispensable to emulate the function of synapse in the working memory. The analog switching characteristics of memristor play a vital role in the emulation of biological synapses. The application of consecutive voltage sweeps or pulses (action potentials) changes the conductivity of the memristor which is considered as the fundamental cause of the synaptic plasticity. In this study, a neuromorphic device using an in-situ growth of sub-tantalum oxide switching layer is fabricated, which exhibits the digital SET and analog RESET switching with an electroforming process without any compliance current (compliance free). The process of electroforming and SET is observed at the positive sweeps of +2.4 V and +0.86 V, respectively, while multilevel RESET is observed with the consecutive negative sweeps in the range of 0 V to -1.2 V. The movement of oxygen vacancies and gradual change in the anatomy of the filament is attributed to digital SET and analog RESET switching characteristics. For the Ti/Ta2O3-x/Pt neuromorphic device, the Ti top and Pt bottom electrodes are considered as counterparts of the pre-synaptic input terminal and a post-synaptic output terminal, respectively. | en_US |
dc.description.sponsorship | This research was supported by the Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of science, ICT & Future Planning. (NRF-2016M3A7B4910426) as well as by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2016R1A6A1A03013422). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | NATURE PUBLISHING GROUP | en_US |
dc.subject | FACILITATION | en_US |
dc.subject | PLASTICITY | en_US |
dc.subject | MEMRISTORS | en_US |
dc.subject | SYNAPSES | en_US |
dc.subject | NETWORK | en_US |
dc.subject | NEURONS | en_US |
dc.subject | ARRAYS | en_US |
dc.subject | MODEL | en_US |
dc.subject | TAOX | en_US |
dc.subject | CELL | en_US |
dc.title | Compliance-Free, Digital SET and Analog RESET Synaptic Characteristics of Sub-Tantalum Oxide Based Neuromorphic Device | en_US |
dc.type | Article | en_US |
dc.relation.volume | 8 | - |
dc.identifier.doi | 10.1038/s41598-018-19575-9 | - |
dc.relation.page | 1228-1237 | - |
dc.relation.journal | SCIENTIFIC REPORTS | - |
dc.contributor.googleauthor | Abbas, Yawar | - |
dc.contributor.googleauthor | Jeon, Yu-Rim | - |
dc.contributor.googleauthor | Sokolov, Andrey Sergeevich | - |
dc.contributor.googleauthor | Kim, Sohyeon | - |
dc.contributor.googleauthor | Ku, Boncheol | - |
dc.contributor.googleauthor | Choi, Changhwan | - |
dc.relation.code | 2018003596 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | cchoi | - |
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