Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 안진호 | - |
dc.date.accessioned | 2019-12-03T00:27:09Z | - |
dc.date.available | 2019-12-03T00:27:09Z | - |
dc.date.issued | 2017-12 | - |
dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 71, no. 12, page. 946-949 | en_US |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.issn | 1976-8524 | - |
dc.identifier.uri | https://link.springer.com/article/10.3938%2Fjkps.71.946 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/116559 | - |
dc.description.abstract | Indium vacancies in Bi-doped In3SbTe2 (BIST) cause local distortion or and faster phase transition of BIST with good stability. The formation energy of the In vacancy in the BIST is relatively lower compared to that in IST due to triple negative charge state of the In vacancy (V-In(3-)) and higher concentration of the V-In(3) in BIST. The band gap of BIST is substantially reduced with increasing concentrations of the V-In(3-) and the hole carriers, which results in a higher electrical conductivity. The phase-change memory (PRAM) device fabricated with the BIST shows very fast, stable switching characteristics at lower voltages. | en_US |
dc.description.sponsorship | This research was supported by the Ministry of Science, ICT and Future Planning under Grant No. 2U06100 ("Extremely low power consumption technology of eDRAM for Internet of Things"). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | KOREAN PHYSICAL SOC | en_US |
dc.subject | Phase change material | en_US |
dc.subject | Phase change memory | en_US |
dc.subject | Distortion | en_US |
dc.subject | Vacancy | en_US |
dc.title | Effects of an In Vacancy on Local Distortion of Fast Phase Transition in Bi-doped In3SbTe2 | en_US |
dc.type | Article | en_US |
dc.relation.no | 12 | - |
dc.relation.volume | 71 | - |
dc.identifier.doi | 10.3938/jkps.71.946 | - |
dc.relation.page | 946-949 | - |
dc.relation.journal | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.contributor.googleauthor | Choi, Minho | - |
dc.contributor.googleauthor | Choi, Heechae | - |
dc.contributor.googleauthor | Kim, Seungchul | - |
dc.contributor.googleauthor | Ahn, Jinho | - |
dc.contributor.googleauthor | Kim, Yong Tae | - |
dc.relation.code | 2017000496 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jhahn | - |
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