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dc.contributor.author박재근-
dc.date.accessioned2019-11-30T09:26:33Z-
dc.date.available2019-11-30T09:26:33Z-
dc.date.issued2017-09-
dc.identifier.citationSCIENTIFIC REPORTS, v. 7, Article no. 11907en_US
dc.identifier.issn2045-2322-
dc.identifier.urihttps://www.nature.com/articles/s41598-017-10967-x-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/115506-
dc.description.abstractFor double MgO-based p-MTJ spin-valves with a top Co2Fe6B2 free layer ex-situ annealed at 400 degrees C, the insertion of a nanoscale-thickness Fe diffusion barrier between the tungsten (W) capping layer and MgO capping layer improved the face-centered-cubic (f.c.c.) crystallinity of both the MgO capping layer and tunneling barrier by dramatically reducing diffusion of W atoms from the W capping layer into the MgO capping layer and tunneling barrier, thereby enhancing the TMR ratio and thermal stability (Delta). In particular, the TMR ratio was extremely sensitive to the thickness of the Fe barrier; it peaked (154%) at about 0.3 nm (the thickness of only two atomic Fe layers). The effect of the diffusion barrier originated from interface strain.en_US
dc.description.sponsorshipThis work was supported by a Basic Science Research Program grant from the National Research Foundation of Korea (NRF) funded by the Korean government (MSIP) (No. 2017R1A2A1A05001285) and the Brain Korea 21 PLUS Program in 2014.en_US
dc.language.isoen_USen_US
dc.publisherNATURE PUBLISHING GROUPen_US
dc.subjectMAGNETORESISTANCE RATIOen_US
dc.titleHighly Enhanced TMR Ratio and Delta for Double MgO-based p-MTJ Spin-Valves with Top Co2Fe6B2 Free Layer by Nanoscale-thick Iron Diffusion-barrieren_US
dc.typeArticleen_US
dc.relation.volume7-
dc.identifier.doi10.1038/s41598-017-10967-x-
dc.relation.page11907-11907-
dc.relation.journalSCIENTIFIC REPORTS-
dc.contributor.googleauthorLee, Seung-Eun-
dc.contributor.googleauthorBaek, Jong-Ung-
dc.contributor.googleauthorPark, Jea-Gun-
dc.relation.code2017003408-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidparkjgl-


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