Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박재근 | - |
dc.date.accessioned | 2019-11-30T09:26:33Z | - |
dc.date.available | 2019-11-30T09:26:33Z | - |
dc.date.issued | 2017-09 | - |
dc.identifier.citation | SCIENTIFIC REPORTS, v. 7, Article no. 11907 | en_US |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://www.nature.com/articles/s41598-017-10967-x | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/115506 | - |
dc.description.abstract | For double MgO-based p-MTJ spin-valves with a top Co2Fe6B2 free layer ex-situ annealed at 400 degrees C, the insertion of a nanoscale-thickness Fe diffusion barrier between the tungsten (W) capping layer and MgO capping layer improved the face-centered-cubic (f.c.c.) crystallinity of both the MgO capping layer and tunneling barrier by dramatically reducing diffusion of W atoms from the W capping layer into the MgO capping layer and tunneling barrier, thereby enhancing the TMR ratio and thermal stability (Delta). In particular, the TMR ratio was extremely sensitive to the thickness of the Fe barrier; it peaked (154%) at about 0.3 nm (the thickness of only two atomic Fe layers). The effect of the diffusion barrier originated from interface strain. | en_US |
dc.description.sponsorship | This work was supported by a Basic Science Research Program grant from the National Research Foundation of Korea (NRF) funded by the Korean government (MSIP) (No. 2017R1A2A1A05001285) and the Brain Korea 21 PLUS Program in 2014. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | NATURE PUBLISHING GROUP | en_US |
dc.subject | MAGNETORESISTANCE RATIO | en_US |
dc.title | Highly Enhanced TMR Ratio and Delta for Double MgO-based p-MTJ Spin-Valves with Top Co2Fe6B2 Free Layer by Nanoscale-thick Iron Diffusion-barrier | en_US |
dc.type | Article | en_US |
dc.relation.volume | 7 | - |
dc.identifier.doi | 10.1038/s41598-017-10967-x | - |
dc.relation.page | 11907-11907 | - |
dc.relation.journal | SCIENTIFIC REPORTS | - |
dc.contributor.googleauthor | Lee, Seung-Eun | - |
dc.contributor.googleauthor | Baek, Jong-Ung | - |
dc.contributor.googleauthor | Park, Jea-Gun | - |
dc.relation.code | 2017003408 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | parkjgl | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.