Room temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductor
- Title
- Room temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductor
- Author
- 김은규
- Keywords
- THIN-FILMS; ZNO; FERROMAGNETISM; TRANSITION; DEPOSITION; BI
- Issue Date
- 2017-08
- Publisher
- AMER INST PHYSICS
- Citation
- AIP ADVANCES, v. 7, no. 8, Article no. 085114
- Abstract
- Bismuth doped ZnO (ZnBi0.03O0.97) thin films are grown using pulsed laser deposition. The existence of positively charged Bi, absence of metallic zinc and the Zn-O bond formation in Bi doped ZnO are confirmed using X-ray Photoelectron Spectroscopy (XPS). Temperature dependent resistivity and UV-visible absorption spectra show lowest resistivity with 8.44 x 10(-4) Omega cm at 300 K and average transmittance of 93 % in the visible region respectively. The robust ferromagnetic signature is observed at 350 K (7.156 x 10(-4) emu/g). This study suggests that Bi doped ZnO films should be a potential candidate for spin based optoelectronic applications. (C) 2017 Author(s).
- URI
- https://aip.scitation.org/doi/10.1063/1.4994044https://repository.hanyang.ac.kr/handle/20.500.11754/115127
- ISSN
- 2158-3226
- DOI
- 10.1063/1.4994044
- Appears in Collections:
- COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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