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Room temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductor

Title
Room temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductor
Author
김은규
Keywords
THIN-FILMS; ZNO; FERROMAGNETISM; TRANSITION; DEPOSITION; BI
Issue Date
2017-08
Publisher
AMER INST PHYSICS
Citation
AIP ADVANCES, v. 7, no. 8, Article no. 085114
Abstract
Bismuth doped ZnO (ZnBi0.03O0.97) thin films are grown using pulsed laser deposition. The existence of positively charged Bi, absence of metallic zinc and the Zn-O bond formation in Bi doped ZnO are confirmed using X-ray Photoelectron Spectroscopy (XPS). Temperature dependent resistivity and UV-visible absorption spectra show lowest resistivity with 8.44 x 10(-4) Omega cm at 300 K and average transmittance of 93 % in the visible region respectively. The robust ferromagnetic signature is observed at 350 K (7.156 x 10(-4) emu/g). This study suggests that Bi doped ZnO films should be a potential candidate for spin based optoelectronic applications. (C) 2017 Author(s).
URI
https://aip.scitation.org/doi/10.1063/1.4994044https://repository.hanyang.ac.kr/handle/20.500.11754/115127
ISSN
2158-3226
DOI
10.1063/1.4994044
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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