Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2019-11-26T01:24:25Z | - |
dc.date.available | 2019-11-26T01:24:25Z | - |
dc.date.issued | 2017-06 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v. 9, no. 28, page. 23934-23940 | en_US |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.issn | 1944-8252 | - |
dc.identifier.uri | https://pubs.acs.org/doi/10.1021/acsami.7b04985 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/114388 | - |
dc.description.abstract | Indium gallium oxide (IGO) thin films were deposited via atomic layer deposition (ALD) using [1,1,1-trimethyl-N-(trimethylsilyl)silanaminato]indium (InCA-1) and trimethylgallium (TMGa) as indium and gallium precursors, respectively, and hydrogen peroxide as the reactant. To clearly understand the mechanism of multicomponent ALD growth of oxide semiconductor materials, several variations in the precursorreactant deposition cycles were evaluated. Gallium could be doped into the oxide film at 200 C when accompanied by an InCA-1 pulse, and no growth of gallium oxide was observed without the simultaneous deposition of indium oxide. Density functional theory calculations for the initial adsorption of the precursors revealed that chemisorption of TMGa was kinetically hindered on hydroxylated SiOx but was spontaneous on a hydroxylated InOx surface. Moreover, the atomic composition and electrical characteristics, such as carrier concentration and resistivity, of the ALD-IGO film were controllable by adjusting the deposition supercycles, composed of InO and GaO subcycles. Thus, ALD-IGO could be employed to fabricate active layers for thin-film transistors to realize an optimum mobility of 9.45 cm(2)/(V s), a threshold voltage of -1.57 V, and a subthreshold slope of 0.26 V/decade. | en_US |
dc.description.sponsorship | J.S. and J.-S.P. were supported by Samsung Display Co., the Ministry of Trade, Industry & Energy (MOTIE; project numbers 10051403, 10052020, and 10052027), and the Korea Display Research Corporation (KDRC). E.J.P. and B.S. were partially supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2016R1C1B2006513). The supercomputing resources, including technical support, was partially provided by the National Institute of Supercomputing and Network/Korea Institute of Science and Technology Information (KSC-2016-C1-0007). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | AMER CHEMICAL SOC | en_US |
dc.subject | surface reaction mechanism | en_US |
dc.subject | gallium-doped indium oxide | en_US |
dc.subject | oxide semiconductor | en_US |
dc.subject | TFT | en_US |
dc.subject | ALD | en_US |
dc.title | Atomic Layer Deposition of an Indium Gallium Oxide Thin Film for Thin-Film Transistor Applications | en_US |
dc.type | Article | en_US |
dc.relation.no | 28 | - |
dc.relation.volume | 9 | - |
dc.identifier.doi | 10.1021/acsami.7b04985 | - |
dc.relation.page | 23934-23940 | - |
dc.relation.journal | ACS APPLIED MATERIALS & INTERFACES | - |
dc.contributor.googleauthor | Sheng, Jiazhen | - |
dc.contributor.googleauthor | Park, Eun Jung | - |
dc.contributor.googleauthor | Shong, Bonggeun | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.relation.code | 2017001478 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
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