Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 최창환 | - |
dc.date.accessioned | 2019-11-25T04:10:30Z | - |
dc.date.available | 2019-11-25T04:10:30Z | - |
dc.date.issued | 2017-05 | - |
dc.identifier.citation | MICROELECTRONIC ENGINEERING, v. 178, page. 240-244 | en_US |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.issn | 1873-5568 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/abs/pii/S0167931717302241?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/114038 | - |
dc.description.abstract | The charge trapping behaviors of ammonium poly-sulfide,(NH4)(2)S-x.,passivated GaN MOS device with atomic layer deposited HfAlOx. gate dielectric and DC-sputtered TiN gate electrode are investigated and compared with those of GaN MOS device with hydrochloric acid, HCI, passivation. Compared to non-S passivated device, higher peak capacitance (>20% @1 MHz), reduced frequency dispersion (similar to 30% down arrow) lower hysteresis (similar to 34% down arrow), higher breakdown (1.3x), lower stress induced flat-band voltage (V-FB) shift (similar to 30% down arrow), and lower interface state density (D-it) stronger immunity D-it generation (Delta D-it) against gate bias voltage are attained with S-passivated device. Further improved characteristics are observed with post deposition annealing at 400 degrees C for 10 min. These behaviors are mainly attributed to higher bond strength energy of S-O and S-N than those of CI-O and Cl-N bonds. (C) 2017 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | This research was supported by Basic Science Research Program through National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (NRF 2015R1D1A1A01060300) as well as the Future Semiconductor Device Technology Development Program (10044842) funded by MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ELSEVIER SCIENCE BV | en_US |
dc.subject | Sulfur passivation | en_US |
dc.subject | Interface trap density | en_US |
dc.subject | Charge trapping | en_US |
dc.subject | GaN device | en_US |
dc.title | Suppressed charge trapping characteristics of (NH4)(2)S-x passivated GaN MOS device with atomic layer deposited HfAlOx gate dielectric | en_US |
dc.type | Article | en_US |
dc.relation.no | Special SI | - |
dc.relation.volume | 178 | - |
dc.identifier.doi | 10.1016/j.mee.2017.05.027 | - |
dc.relation.page | 240-244 | - |
dc.relation.journal | MICROELECTRONIC ENGINEERING | - |
dc.contributor.googleauthor | Han, Hoon Hee | - |
dc.contributor.googleauthor | Lim, Donghwan | - |
dc.contributor.googleauthor | Sergeevich, Andrey Sokolov | - |
dc.contributor.googleauthor | Jeon, Yu-Rim | - |
dc.contributor.googleauthor | Lee, Jae Ho | - |
dc.contributor.googleauthor | Son, Seok Ki | - |
dc.contributor.googleauthor | Choi, Changhwan | - |
dc.relation.code | 2017001998 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | cchoi | - |
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