Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 강보수 | - |
dc.date.accessioned | 2019-11-21T07:27:45Z | - |
dc.date.available | 2019-11-21T07:27:45Z | - |
dc.date.issued | 2019-04 | - |
dc.identifier.citation | CURRENT APPLIED PHYSICS, v. 19, No. 4, Page. 486-490 | en_US |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.issn | 1878-1675 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S1567173919300458 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/113287 | - |
dc.description.abstract | HfO2-based ferroelectrics have attracted attention as promising materials for advanced memory applications owing to their negative capacitance effect, high scalability, and full-CMOS compatibility. Accordingly, the switching dynamics of HfO2 thin films have been actively discussed and simulated using the Landau-Khalatnikov equation (LK model). Although the simulated results agree with experimental results in many studies, there is a slight dissimilarity near the coercive field in the polarization-electric field curve. For accurate and general modeling, a new model that combines the conventional LK model and Euler's equation was proposed in this work. The model was examined under single-domain and multi-domain conditions. The simulated curves using the Landau-Euler method better fit with measured curves than those using the LK model. | en_US |
dc.description.sponsorship | This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) grant funded by the Ministry of Science and Information & Communication Technology (MSIT, South Korea) (No. 2018R1A2B6006508). This research was also supported by the Industrial Strategic Technology Development Program (No. 10067803) funded by the Ministry of Trade, Industry & Energy (MOTIE, South Korea). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ELSEVIER SCIENCE BV | en_US |
dc.subject | Ferroelectric | en_US |
dc.subject | Switching dynamics | en_US |
dc.subject | HfO2 | en_US |
dc.subject | Polarization-electric field curve | en_US |
dc.title | Switching dynamics and modeling of multi-domain Zr-Doped HfO2 ferroelectric thin films | en_US |
dc.type | Article | en_US |
dc.relation.no | 4 | - |
dc.relation.volume | 19 | - |
dc.identifier.doi | 10.1016/j.cap.2019.01.022 | - |
dc.relation.page | 486-490 | - |
dc.relation.journal | CURRENT APPLIED PHYSICS | - |
dc.contributor.googleauthor | Noh, Youngji | - |
dc.contributor.googleauthor | Jung, Moonyoung | - |
dc.contributor.googleauthor | Yoon, Jungkyu | - |
dc.contributor.googleauthor | Hong, Seunghyeon | - |
dc.contributor.googleauthor | Park, Sanghyun | - |
dc.contributor.googleauthor | Kang, Bo Soo | - |
dc.contributor.googleauthor | Ahn, Seung-Eon | - |
dc.relation.code | 2019003664 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E] | - |
dc.sector.department | DEPARTMENT OF APPLIED PHYSICS | - |
dc.identifier.pid | bosookang | - |
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