Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 오새룬터 | - |
dc.date.accessioned | 2019-11-21T06:46:51Z | - |
dc.date.available | 2019-11-21T06:46:51Z | - |
dc.date.issued | 2019-04 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS, v. 58, No. 5, Article no. 050906 | en_US |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.issn | 1347-4065 | - |
dc.identifier.uri | https://iopscience.iop.org/article/10.7567/1347-4065/ab0736/meta | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/113243 | - |
dc.description.abstract | We quantitatively characterized the thermal recovery process of flexible top-gate amorphous InGaZnO thin-film transistors stressed by repetitive mechanical bending. The interface trap density increases due to repetitive bending stress concentrated at the interface between the InGaZnO and Al2O3 layers near the source and drain electrodes. After 40 000 bending cycles, an increase in series resistance and subthreshold slope degradation is observed. Then, the restoration of the subthreshold slope is monitored over several hours at elevated temperatures. The threshold voltage remained nearly constant during this process. We propose a stretched exponential approach to the time-dependent subthreshold slope restoration to quantify the recovery of interface trap density at various temperatures. We present the method to extract the activation energy required for thermal relaxation of the interface trap sites generated by repetitive bending stress. (C) 2019 The Japan Society of Applied Physics | en_US |
dc.description.sponsorship | This work was supported by the Industry Technology R&D program of MOTIE (Ministry of Trade, Industry & Energy) and KDRC (Korea Display Research Corporation) [10051403 and 10052020]. This work was also supported in part by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2018R1D1A1B07043334). This work was also supported by the National Research Foundation of Korea (NRF) grant funded by the Korean government (NRF-2017R1D1A1B03034035). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | IOP PUBLISHING LTD | en_US |
dc.title | Quantitative analysis of interface trap recovery caused by repetitive bending stress in flexible oxide thin-film transistors | en_US |
dc.type | Article | en_US |
dc.relation.no | 050906 | - |
dc.relation.volume | 58 | - |
dc.identifier.doi | 10.7567/1347-4065/ab0736 | - |
dc.relation.page | 1-5 | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.googleauthor | Jeong, Hyun-Jun | - |
dc.contributor.googleauthor | Kim, Beom-Su | - |
dc.contributor.googleauthor | Han, Ki-Lim | - |
dc.contributor.googleauthor | Oh, Saeroonter | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.relation.code | 2019002284 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DIVISION OF ELECTRICAL ENGINEERING | - |
dc.identifier.pid | sroonter | - |
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