Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박재근 | - |
dc.date.accessioned | 2019-11-21T06:27:52Z | - |
dc.date.available | 2019-11-21T06:27:52Z | - |
dc.date.issued | 2017-03 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v. 64, no. 5, page. 2345-2349 | en_US |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.issn | 1557-9646 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/7878570 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/113221 | - |
dc.description.abstract | Si CMOS image-sensor (CIS) cells were designed by implementing proximity relaxation gettering sites of hydrogen-ion implantation-induced nanocavities (20-35nm in diameter) underneath Si photodiode regions to enhance the sensing margin of output voltage in CIS cells. They enabled almost no degradation in the output voltage sensing margin, although similar to 10(14)cm(-2) of Fe, Cu, Ni, and Co contaminants were introduced in the photodiode regions of CIS cells, demonstrating an excellent relaxation gettering ability. However, Si CIS cells designed with p/p(++) epitaxial wafers, which are widely used, showed that the sensing margin of the CIS cells significantly decreased as the concentration of Cu and Ni contaminants in the Si photodiode regions increased, indicating no segregation gettering ability. | en_US |
dc.description.sponsorship | This work was supported in part the by the Brain Korea 21 PLUS Program in 2016 and in part by the Silicon Wafer Engineering and Defect Science. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | Cavities | en_US |
dc.subject | CMOS image sensors (CIS) | en_US |
dc.subject | gettering | en_US |
dc.subject | hydrogen ion implantation | en_US |
dc.title | Si CMOS Image-Sensors Designed With Hydrogen-Ion Implantation Induced Nanocavities for Enhancing Output Voltage Sensing Margin via Proximity Gettering | en_US |
dc.type | Article | en_US |
dc.relation.volume | 64 | - |
dc.identifier.doi | 10.1109/TED.2017.2677948 | - |
dc.relation.page | 2345-2349 | - |
dc.relation.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.contributor.googleauthor | Kim, Il-Hwan | - |
dc.contributor.googleauthor | Park, Jun-Seong | - |
dc.contributor.googleauthor | Shim, Tae-Hun | - |
dc.contributor.googleauthor | Park, Jea-Gun | - |
dc.relation.code | 2017003133 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | parkjgl | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.