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dc.contributor.author차민철-
dc.date.accessioned2019-11-21T05:11:19Z-
dc.date.available2019-11-21T05:11:19Z-
dc.date.issued2019-04-
dc.identifier.citationJOURNAL OF PHYSICS-CONDENSED MATTER, v. 31, No. 26, Article no. 265601en_US
dc.identifier.issn0953-8984-
dc.identifier.issn1361-648X-
dc.identifier.urihttps://iopscience.iop.org/article/10.1088/1361-648X/ab146b/meta-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/113140-
dc.description.abstractWe investigate the properties of the gap-edge states of half-filled interacting disordered zigzag graphene nanoribbons, and find that the midgap states can display a quantized fractional charge of 1/2. These gap-edge states can be represented by topological kinks with their site probability distribution divided between the left and right zigzag edges with different chiralities. In addition, there are numerous spin-split gap-edge states, similar to those in a Mott-Anderson insulator.en_US
dc.description.sponsorshipThis research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Education, ICT & Future Planning (MSIP) (NRF-2018R1D1A1A09082332 to SREY and NRF-2016R1D1A1B03935815 to MCC).en_US
dc.language.isoen_USen_US
dc.publisherIOP PUBLISHING LTDen_US
dc.subjectgraphene nanoribbonen_US
dc.subjectgap statesen_US
dc.subjectedge antiferromagnetismen_US
dc.subjectMott-Anderson insulatoren_US
dc.subjectsolitonen_US
dc.subjectfractional chargeen_US
dc.titleSoliton fractional charge of disordered graphene nanoribbonen_US
dc.typeArticleen_US
dc.relation.no26-
dc.relation.volume31-
dc.identifier.doi10.1088/1361-648X/ab146b-
dc.relation.page265601-265610-
dc.relation.journalJOURNAL OF PHYSICS-CONDENSED MATTER-
dc.contributor.googleauthorJeong, Y. H.-
dc.contributor.googleauthorYang, S-R Eric-
dc.contributor.googleauthorCha, M-C-
dc.relation.code2019001812-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF PHOTONICS AND NANOELECTRONICS-
dc.identifier.pidmccha-


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