Time-dependent dielectric breakdown of MgO magnetic tunnel junctions and novel test method
- Title
- Time-dependent dielectric breakdown of MgO magnetic tunnel junctions and novel test method
- Author
- 송윤흡
- Keywords
- ROOM-TEMPERATURE; MAGNETORESISTANCE; TECHNOLOGY; INSERTION
- Issue Date
- 2017-02
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v. 56, no. 4S, Article no. 04CN02
- Abstract
- Time-dependent dielectric breakdown (TDDB), which is used to measure reliability, depends on both the thickness of the tunnel barrier and bias voltage. In addition, the heat generated by self-heating in a magnetic tunneling junction (MTJ) affects TDDB. Therefore, we investigated TDDB with the self-heating effect for a MgO tunnel barrier with thicknesses of 1.1 and 1.2nm by the constant voltage stress (CVS) method. Using the results of this experiment, we predicted a TDDB of 1.0nm for the tunnel barrier. Also, we suggested the use of not only the CVS method, which is a common way of determining TDDB, but also the constant current stress (CCS) method, which compensates for the disadvantages of the CVS method. (C) 2017 The Japan Society of Applied Physics
- URI
- https://iopscience.iop.org/article/10.7567/JJAP.56.04CN02https://repository.hanyang.ac.kr/handle/20.500.11754/112726
- ISSN
- 0021-4922; 1347-4065
- DOI
- 10.7567/JJAP.56.04CN02
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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