Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 정재경 | - |
dc.date.accessioned | 2019-10-21T00:41:34Z | - |
dc.date.available | 2019-10-21T00:41:34Z | - |
dc.date.issued | 2019-06 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v. 11, NO 24, Page. 21675-21685 | en_US |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.issn | 1944-8252 | - |
dc.identifier.uri | https://pubs.acs.org/doi/10.1021/acsami.9b02935 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/111231 | - |
dc.description.abstract | This paper reports the fabrication of indium gallium tin oxide (IGTO) thin-film transistors (TFTs) with ultraviolet (UV)-treated PVP-co-PMMA-based hybrid gate insulators at an extremely low temperature (<= 150 degrees C). Synergetic hafnia loading and UV treatment were used to tailor the mechanical softness and hydroxyl fraction in the polymer dielectric film. The UV-treated hybrid dielectric film had a low hydroxyl concentration, a smoother surface, and a denser packing nature, which can be explained by the high ionicity of hafnium oxide and photon-assisted improvement in the cohesion between organic and inorganic materials. Suitability of the UV-treated hybrid dielectric film as a gate insulator was evaluated by fabricating bottom gate TFTs with sputtered IGTO films as a channel layer, which showed high carrier mobility at a low temperature. The resulting IGTO TFTs with a UV-treated hybrid gate insulator exhibited a remarkable high field-effect mobility of 25.9 cm(2)/(V s), a threshold voltage of -0.2 V, a subthreshold gate swing of 0.4 V/decade, and an I-ON/OFF ratio of >10(7) even at a low annealing temperature of 150 degrees C. The fabricated IGTO TFTs with the UV -treated hybrid dielectric film on the plastic substrate were shown to withstand the 100 times mechanical bending stress even under an extremely small curvature radius of 1 mm due to the intrinsic stretchability of the hybrid dielectric film. | en_US |
dc.description.sponsorship | This work was supported by MKE/KEIT through the Industrial Strategic Technology Development Program under Grant 10079974 and Samsung Research Funding Center for Future Technology through Samsung Electronics. | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER CHEMICAL SOC | en_US |
dc.subject | low temperature | en_US |
dc.subject | ultraviolet (UV) | en_US |
dc.subject | stretchability | en_US |
dc.subject | hybrid dielectric | en_US |
dc.subject | thin-film transistor (TFT) | en_US |
dc.subject | indium gallium tin oxide (IGTO) | en_US |
dc.title | Stretchable Polymer Gate Dielectric by Ultraviolet-Assisted Hafnium Oxide Doping at Low Temperature for High-Performance Indium Gallium Tin Oxide Transistors | en_US |
dc.type | Article | en_US |
dc.relation.volume | 11 | - |
dc.identifier.doi | 10.1021/acsami.9b02935 | - |
dc.relation.page | 21675-21685 | - |
dc.relation.journal | ACS APPLIED MATERIALS & INTERFACES | - |
dc.contributor.googleauthor | Hur, Jae Seok | - |
dc.contributor.googleauthor | Kim, Jeong Oh | - |
dc.contributor.googleauthor | Kim, Hyeon A. | - |
dc.contributor.googleauthor | Jeong, Jae Kyeong | - |
dc.relation.code | 2019002549 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | jkjeong1 | - |
dc.identifier.orcid | https://orcid.org/0000-0003-3857-1039 | - |
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