Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 오혜근 | - |
dc.date.accessioned | 2019-10-14T04:33:52Z | - |
dc.date.available | 2019-10-14T04:33:52Z | - |
dc.date.issued | 2005-06 | - |
dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 46, No. 6, Page. 1439-1444 | en_US |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.issn | 1976-8524 | - |
dc.identifier.uri | http://www.jkps.or.kr/journal/view.html?uid=7016&vmd=Full | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/111028 | - |
dc.description.abstract | In the semiconductor lithography process, the thermal flow process after development can pattern sub-100-nm contact holes and saves the cost of using resolution enhancement technology. In this study, the resist flowing behavior and the contact hole shrinkage are described by using the level-set method and the thermal reflow length. The viscosity variable affects the shrinkage of the critical dimension. This variable is extracted from the experimental data by using a proposed equation. Our simulation results are in good agreement with the experimental results for various baking temperatures and times. Although the most effective process of a 193-nm chemically amplified resist is the post exposure bake process, the inhibition reaction order of the enhanced Mack model, which is a parameter of the development process, is shown to be the most controllable parameter for the critical dimension. In the resist reflow process, the side-wall angle of the resist profile is decreased by the surface tension. This phenomenon is,shown to be similar to that in the spin coating process by modeling a dimensionless parameter in spin coating. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | KOREAN PHYSICAL SOC | en_US |
dc.title | Bulk effects of thermal flow resists | en_US |
dc.type | Article | en_US |
dc.relation.journal | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.contributor.googleauthor | Kim, SK | - |
dc.contributor.googleauthor | Oh, HK | - |
dc.contributor.googleauthor | An, I | - |
dc.contributor.googleauthor | Lee, SM | - |
dc.contributor.googleauthor | Bok, CK | - |
dc.contributor.googleauthor | Moon, SC | - |
dc.relation.code | 2009205987 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E] | - |
dc.sector.department | DEPARTMENT OF APPLIED PHYSICS | - |
dc.identifier.pid | hyekeun | - |
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