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dc.contributor.author김학성-
dc.date.accessioned2019-10-02T02:00:00Z-
dc.date.available2019-10-02T02:00:00Z-
dc.date.issued2019-04-
dc.identifier.citation대한기계학회 재료 및 파괴부문 2019년도 춘계학술대회 논문집, Page. 43-44en_US
dc.identifier.urihttp://www.dbpia.co.kr/view/ar_view.asp?arid=4803427-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/110804-
dc.description.sponsorshipThis work was supported by National Research Foundation of Korea(NRF) funded by the Ministry of Education(2012R1A6A1029029 and 2018R1D1A1A09083236). This work was also supported by the Materials&Components Technology Development Program (20002957,Development of AgNW RGO transparent electrode material and process based on IPL for OPV) funded by the Ministry of Trade,Industry & Energy(MOTIE,Korea).en_US
dc.language.isoko_KRen_US
dc.publisher대한기계학회en_US
dc.titleIGZO 반도체 및 구리 전극의 deep-UV/IPL 광어닐링 공정을 통한 TFT 특성 연구en_US
dc.title.alternativeStudy on all intense pulsed light (IPL) annealed thin film transistor (TFT) using IGZO semiconductor and Cu source drain via UV-assisted flash light irradiationen_US
dc.typeArticleen_US
dc.relation.page1-1-
dc.contributor.googleauthor장용래-
dc.contributor.googleauthor문창진-
dc.contributor.googleauthor박종휘-
dc.contributor.googleauthor김학성-
dc.contributor.googleauthorJang, Yong-Rae-
dc.contributor.googleauthorMoon, Chang-Jin-
dc.contributor.googleauthorPark, Jong-Whi-
dc.contributor.googleauthorKim, Hak-Sung-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MECHANICAL ENGINEERING-
dc.identifier.pidkima-
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COLLEGE OF ENGINEERING[S](공과대학) > MECHANICAL ENGINEERING(기계공학부) > Articles
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