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Simulation of thermal resist flow process

Title
Simulation of thermal resist flow process
Author
오혜근
Keywords
Chemically amplified resist; Lithography; Lithography simulation; Thermal process
Issue Date
2005-05
Publisher
SPIE
Citation
Proceedings of SPIE, Advances in Resist Technology and Processing XXII, v. 5753, Page. 1186-1193
Abstract
In the semiconductor lithography process, the thermal flow process after development resolves the patterning of sub-100 nm contact hole and saves cost problem of resolution enhancement technology. In this study, resist flowing behavior and contact hole shrinkage are described by using the thermal reflow length of the boundary movement method and the analysis of image process. The viscosity variable affects the shrinkage of critical dimension. This variable is extracted from the experimental data by using a proposed equation. Those results have a good agreement with the experimental results in both contact hole size and the vertical wall of profile according to the baking temperature and time. Although the most effective process of the 193 nm chemically amplified resist is the post-expose bake process for critical dimension, the parameter of the development process, the inhibition reaction order of the enhanced Mack model, is shown as the most controllable parameter for critical dimension in thermal reflow process.
URI
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/5753/0000/Simulation-of-thermal-resist-flow-process/10.1117/12.600699.fullhttp://repository.hanyang.ac.kr/handle/20.500.11754/110298
ISSN
1605-7422
DOI
10.1117/12.600699
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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