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A 10-Gb/s planar InGaAs/InP avalanche photodiode with a thin multiplication layer fabricated by using recess-etching and single-diffusion processes

Title
A 10-Gb/s planar InGaAs/InP avalanche photodiode with a thin multiplication layer fabricated by using recess-etching and single-diffusion processes
Author
유경렬
Issue Date
2006-07
Publisher
한국물리학회
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 49, No. 1, Page. 253-260
Abstract
We present a planar InGaAs/InP separated absorption, grading, charge, and multiplication (SAGCM) avalanche photodiode (APD) with a thin multiplication layer of 0.2 mu m in thickness operating up to 10 Gb/s. It has two floating guard rings (FGRs) and a deep floating ring (DFGR). The multiplication layer thickness and the doping concentration of the charge layer are carefully designed in terms of both the gain and the bandwidth by utilizing the nonlocal model. The simple fabrication processes of recess etching and one-step diffusion are applied. The experimental results show good agreement with the design. Superior characteristics, such as a large gain-bandwidth (GB) product of above 110 GHz, a low dark current of less than 1 nA at 90 \% of the breakdown voltage, and a uniform 2-dimensional gain profile within the active region, are obtained.
URI
http://www.jkps.or.kr/journal/view.html?uid=7790&vmd=Fullhttp://repository.hanyang.ac.kr/handle/20.500.11754/108377
ISSN
0374-4884; 1976-8524
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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