Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 오누리 | - |
dc.date.accessioned | 2019-08-08T00:59:46Z | - |
dc.date.available | 2019-08-08T00:59:46Z | - |
dc.date.issued | 2019-02 | - |
dc.identifier.citation | ACS NANO, v. 13, NO 2, Page. 2324-2333 | en_US |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.issn | 1936-086X | - |
dc.identifier.uri | https://pubs.acs.org/doi/10.1021/acsnano.8b09055 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/108316 | - |
dc.description.abstract | Colloidal semiconductor nanocrystals (NCs) are a promising materials class for solution-processable, next-generation electronic devices. However, most high-performance devices and circuits have been achieved using NCs containing toxic elements, which may limit their further device development. We fabricate high mobility CuInSe2 NC field-effect transistors (FETs) using a solution-based, post-deposition, sequential cation exchange process that starts with electronically coupled, thiocyanate (SCN)-capped CdSe NC thin films. First Cu+ is substituted for Cd2+ transforming CdSe NCs to Cu-rich Cu2Se NC films. Next, Cu2Se NC films are dipped into a Na2Se solution to Se-enrich the NCs, thus compensating the Cu-rich surface, promoting fusion of the Cu2Se NCs, and providing sites for subsequent In-dopants. The liquid-coordination-complex trioctylphosphine indium chloride (TOP InCl3) is used as a source of In3+ to partially exchange and n-dope CuInSe2 NC films. We demonstrate Al2O3-encapsulated, air-stable CuInSe2 NC FETs with linear (saturation) electron mobilities of 8.2 +/- 1.8 cm(2)/(V s) (10.5 +/- 2.4 cm(2)/(V s)) and with current modulation of 10(5), comparable to that for high-performance Cd-, Pb-, and As-based NC FETs. The CuInSe2 NC FETs are used as building blocks of integrated inverters to demonstrate their promise for low-cost, low-toxicity NC circuits. | en_US |
dc.description.sponsorship | We thank Q Zhao, F. Stinner, N. Cui, and C. Zeng for helpful discussions. The authors are grateful for primary support of this work from the National Science Foundation (NSF) MRSEC Program under Award No. DMR-1720530 for NC synthesis, post-deposition cation exchange, WAXS, EDS, HRTEM, device fabrication, and electronic property measurements. The optical absorption and PL measurements are supported by Center for Advanced Solar Photophysics, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science. FIB cutting and imaging and ICP-OES are supported by the Office of Naval Research Multidisciplinary University Research Initiative Award No. N00014-18-1-2497. Electron microscopy/FIB is performed in facilities supported by the NSF MRSEC program DMR-1720530. | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER CHEMICAL SOC | en_US |
dc.subject | nanocrystals | en_US |
dc.subject | doping | en_US |
dc.subject | solution process | en_US |
dc.subject | copper indium diselenide | en_US |
dc.subject | stoichiometry | en_US |
dc.subject | field effect transistors | en_US |
dc.subject | integrated circuits | en_US |
dc.title | Air-Stable CuInSe2 Nanocrystal Transistors and Circuits via Post-Deposition Cation Exchange | en_US |
dc.type | Article | en_US |
dc.relation.no | 2 | - |
dc.relation.volume | 13 | - |
dc.identifier.doi | 10.1021/acsnano.8b09055 | - |
dc.relation.page | 2324-2333 | - |
dc.relation.journal | ACS NANO | - |
dc.contributor.googleauthor | Wang, Han | - |
dc.contributor.googleauthor | Butler, Derrick J. | - |
dc.contributor.googleauthor | Straus, Daniel B. | - |
dc.contributor.googleauthor | Oh, Nuri | - |
dc.contributor.googleauthor | Wu, Fengkai | - |
dc.contributor.googleauthor | Guo, Jiacen | - |
dc.contributor.googleauthor | Xue, Kun | - |
dc.contributor.googleauthor | Lee, Jennifer D. | - |
dc.contributor.googleauthor | Murray, Christopher B. | - |
dc.contributor.googleauthor | Kagan, Cherie R. | - |
dc.relation.code | 2019002974 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | irunho | - |
dc.identifier.researcherID | D-3547-2017 | - |
dc.identifier.orcid | http://orcid.org/0000-0001-9145-8911 | - |
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