Controlled Growth of Vertically Aligned Carbon Nanofibers by Plasma Enhanced Chemical Vapor Deposition
- Title
- Controlled Growth of Vertically Aligned Carbon Nanofibers by Plasma Enhanced Chemical Vapor Deposition
- Author
- 김동욱
- Issue Date
- 2006-06
- Publisher
- 한국물리학회
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 48, No. 6, Page. 1385-1389
- Abstract
- We investigated the growth behavior and morphology of vertically aligned carbon nanofibers
(CNFs) grown on silicon (Si) substrates by using dc plasma enhanced chemical vapor deposition.
We found that plasma etching and electric-field direction played important roles in controlling the
CNF morphology and alignment direction, respectively. Si etching and resulting redeposition often
produced tapered diameter carbon nanocones containing Si. Deposition of protection layers, such
as Ti, TiN, and W, successfully suppressed the unwanted etching and enabled desirable needle-like
CNF growth. In a conventional field emitter structure, a gate metal layer, surrounding a CNF
emission tip, could be utilized as a protection layer to allow cylindrical CNF growth. We also
demonstrated that sharply bent CNFs could be grown by manipulating the electric-field direction.
This growth of sharply bent CNFs clearly manifests the electric-field-induced CNF alignment
mechanism and that mechanism can be applied to other nanostructure syntheses.
- URI
- http://www.jkps.or.kr/journal/view.html?uid=7597&vmd=Fullhttps://repository.hanyang.ac.kr/handle/20.500.11754/108166
- ISSN
- 0374-4884; 1976-8524
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > ETC
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