Critical dimension control for 32 nm node random contact hole array with resist flow process
- Title
- Critical dimension control for 32 nm node random contact hole array with resist flow process
- Author
- 홍주유
- Issue Date
- 2007-02
- Publisher
- The international society for optical engineering
- Citation
- Proceedings, Photomask Technology 2007, v. 6730, Article no. 673043
- Abstract
- 50 nm random contact hole array by resist reflow process (RRP) was studied to make 32 nm node device. Patterning
of smaller contact hole array is harder than patterning the line and space. RRP has a lot of advantages, but RRP strongly
depends on pattern array, pitch, and shape. Thus, we must have full knowledge for pattern dependency after RRP, and
then we need to have optimum optical proximity corrected mask including RRP to compensate the pattern dependency in
random array.
To make optimum optical proximity and RRP corrected mask, we must have better understanding that how much resist
flows and where the contact hole locations are after RRP. A simulation is made to correctly predict RRP result by
including the RRP parameters such as viscosity, adhesion force, surface tension and location of the contact hole. As a
result, we made uniform 50 nm contact hole patterns even for the random contact hole array and for different shaped
contact hole array by optical proximity corrected RRP.
- URI
- https://www.spiedigitallibrary.org/conference-proceedings-of-spie/6730/673043/Critical-dimension-control-for-32-nm-random-contact-hole-array/10.1117/12.746518.full?SSO=1https://repository.hanyang.ac.kr/handle/20.500.11754/106282
- DOI
- 10.1117/12.746518
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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