Cu3Si-doped porous-silicon particles prepared by simplified chemical vapor deposition method as anode material for high-rate and long cycle lithium-ion batteries
- Title
- Cu3Si-doped porous-silicon particles prepared by simplified chemical vapor deposition method as anode material for high-rate and long cycle lithium-ion batteries
- Author
- 선양국
- Keywords
- Cu3Si doping; Porous silicon particles; Simplified CVD method; Lithium-ion batteries; Anode material
- Issue Date
- 2017-01
- Publisher
- ELSEVIER SCIENCE SA
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v. 701, page. 425-432
- Abstract
- To provide a possible proposal for the large-scale production of a high performance silicon-based anode material in the lithium battery industry, a Cu3Si nanoparticle doped porous-silicon particles was prepared via a simplified chemical vapor deposition (CVD) process and heat treatment for the first time. In this work, the Cu3Si doping content was optimized by discharge/charge, transmission electron microscopy and electrochemical impedance spectroscopy tests. The results show that compared with the porous-silicon (PS) particles, the Cu3Si doping significantly enhanced the discharge capacity, coulombic efficiency, capacity retention, and high-rate performance of the silicon-based anode. The optimum performance with a discharge capacity of 3036.4 mA h g(-1) and a coulombic efficiency of 90.49% at the first cycle (after the first three formation cycles) and a capacity retention of 58.72% after 100 cycles occurred at a Cu3Si doping content of 2 wt%. The reasons for this are as follows: the PS particles with a similarly silicon nanorod structure accommodated the volume change to maintain the mechanical stability of the electrode during the cycling process; during the simplified CVD process, the nanostructure of silicon was retained; the high conductivity due to Cu3Si doping decreased the formation resistance of the solid-electrolyte interphase (SEI) film and enhanced the diffusion coefficient of Li+ inside the silicon based material; both fewer Cu3Si doping and aggregation particles resulting from excessive Cu3Si doping yielded insufficient electrical conductivity and decreased the formation resistance of the SEI film for the silicon-based material. (C) 2017 Elsevier B.V. All rights reserved.
- URI
- https://www.sciencedirect.com/science/article/abs/pii/S0925838817301615?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/106036
- ISSN
- 0925-8388; 1873-4669
- DOI
- 10.1016/j.jallcom.2017.01.137
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
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