Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김우희 | - |
dc.date.accessioned | 2019-05-23T01:06:54Z | - |
dc.date.available | 2019-05-23T01:06:54Z | - |
dc.date.issued | 2018-10 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v. 10, No. 46, Page. 40286-40293 | en_US |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://pubs.acs.org/doi/abs/10.1021/acsami.8b14244 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/105743 | - |
dc.description.abstract | A method for significantly increasing the growth rates (GRs) of high-k oxide thin films grown via plasma enhanced atomic layer deposition (PE-ALD) by enhancing the plasma density through the addition of Ar gas to the O-2 plasma oxidant was developed. This approach led to improvements of, similar to 60% in the saturation GRs of PE-ALD ZrO2, HfO2, and SiO2. Furthermore, despite the significantly higher GR enabled by PE-ALD, the mechanical and dielectric properties of the PE-ALD oxide films were similar or even superior to those of films grown via the conventional O-2 plasma process. Optical emission spectroscopy analyses in conjunction with theoretical calculation of the electron energy distribution function revealed that adding Ar gas to the O-2 plasma increased the density of high-energy electrons, thereby generating more O-2 plasma species, such as ions and radicals, which played a key role in improving the GRs and the properties of the films. This promising approach is expected to facilitate the high-volume manufacturing of films via PE-ALD, especially for use as gate insulators in thin-film transistor-based devices in the display industry. | en_US |
dc.description.sponsorship | This work was supported by the Materials and Components Technology Development Program of MOTIE/KEIT [10080642, Development on precursors for carbon/halogen-free thin film and their delivery system for high-k/metal gate application]. It was also supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIP) (no. NRF-2017R1C1B5076821). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | AMER CHEMICAL SOC | en_US |
dc.subject | atomic layer deposition | en_US |
dc.subject | O-2/Ar plasma | en_US |
dc.subject | oxide thin films | en_US |
dc.subject | enhanced growth rates | en_US |
dc.subject | high-energy electron temperature | en_US |
dc.subject | increased plasma density | en_US |
dc.title | The Effects of Ar Addition to O2 Plasma on the Plasma-Enhanced Atomic Layer Deposition of Oxide Thin Films | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1021/acsami.8b14244 | - |
dc.relation.journal | ACS APPLIED MATERIALS & INTERFACES | - |
dc.contributor.googleauthor | Jung, H. | - |
dc.contributor.googleauthor | Oh, I.-K. | - |
dc.contributor.googleauthor | Yoon, C.M. | - |
dc.contributor.googleauthor | Park, B.-E. | - |
dc.contributor.googleauthor | Lee, S. | - |
dc.contributor.googleauthor | Kwon, O. | - |
dc.contributor.googleauthor | Lee, W.J. | - |
dc.contributor.googleauthor | Kwon, S.-H. | - |
dc.contributor.googleauthor | Kim, W.-H. | - |
dc.contributor.googleauthor | Kim, H. | - |
dc.relation.code | 2018001712 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING | - |
dc.identifier.pid | wooheekim | - |
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