Hf-Al-Zn-O 기반의 투명 박막 트랜지스터의 NBIS 안정성 분석
- Title
- Hf-Al-Zn-O 기반의 투명 박막 트랜지스터의 NBIS 안정성 분석
- Other Titles
- NBIS stability of Hf-Al-Zn-O based transparent thin film transistors
- Author
- 박진석
- Issue Date
- 2017-07
- Publisher
- 대한전기학회
- Citation
- 2017년도 대한전기학회 창립 70주년 제48회 하계학술대회, Page. 1143-1144
- Abstract
- Aluminum-zinc-oxide
(AZO)
and
hafnium-aluminum-
zinc-oxide
(HAZO)
thin
films
were
deposited
via
co-sputtering.
Also,
thin
film
transistors
(TFTs)
using
the
AZO
and
HAZO
films
as
the
channel
layers
were
fabricated.
X-ray
photoelectron
spectroscopy
(XPS)
were
measured
to
investigate
the
effects
of
Hf-incorporation
on
AZO
films.
To
analyze
the
stability
phenomena
of
the
fabricated
AZO-
and
HAZO-TFTs,
the
changes
in
their
transfer
characteristics
were
measured
under
the
light-induced
stress
(using
white
LEDs)
and
negative-bias-illumination-stress
(NBIS)
conditions.
The
experimental
results
confirmed
that
Hf-doping
enhanced
the
stability
of
the
devices.
- URI
- http://www.dbpia.co.kr/Journal/ArticleDetail/NODE07232546https://repository.hanyang.ac.kr/handle/20.500.11754/103479
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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