Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김재균 | - |
dc.date.accessioned | 2019-05-07T02:36:26Z | - |
dc.date.available | 2019-05-07T02:36:26Z | - |
dc.date.issued | 2017-07 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v. 9, No. 31, Page. 26161-26168 | en_US |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://pubs.acs.org/doi/abs/10.1021/acsami.7b05948 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/103460 | - |
dc.description.abstract | Here, we report static and dynamic water motion-induced instability in indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) and its effective suppression with the use of a simple, solution-processed low-k (epsilon similar to 1.9) fluoroplastic resin (FPR) passivation layer. The liquid-contact electrification effect, in which an undesirable drain current modulation is induced by a dynamic motion of a charged liquid such as water, can cause a significant instability in IGZO TFTs. It was found that by adopting a thin (similar to 44 nm) FPR passivation layer for IGZO TFTs, the current modulation induced by the water-contact electrification was greatly reduced in both off- and on-states of the device. In addition, the FPR-passivated IGZO TFTs exhibited an excellent stability to static water exposure (a threshold voltage shift of +0.8 V upon 3600 s of water soaking), which is attributed to the hydrophobicity of the FPR passivation layer. Here, we discuss the origin of the current instability caused by the liquid-contact electrification as well as various static and dynamic stability tests for IGZO TFTs. On the basis of our findings, we believe that the use of a thin, solution-processed FPR passivation layer is effective in suppressing the static and dynamic water motion-induced instabilities, which may enable the realization of high-performance and environment-stable oxide TFTs for emerging wearable and skin-like electronics. | en_US |
dc.description.sponsorship | This work was supported by "Human Resources Program in Energy Technology" of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), which granted financial resource support from the Ministry of Trade, Industry & Energy, Republic of Korea (No. 20154030200870), by the Basic Research Lab. Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (NRF-2014R1A4A1008474), and by Development of excellent waterproof and impact resistance mobile phone bezel adhesive tape with thickness less than 80 mu m (2016-10067433) funded by the Korea government Ministry of Trade, Industry and Energy. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | AMER CHEMICAL SOC | en_US |
dc.subject | fluoropolymer passivation | en_US |
dc.subject | indium-gallium-zinc oxide | en_US |
dc.subject | liquid-contact-electrification | en_US |
dc.subject | solution process | en_US |
dc.subject | thin-film transistors | en_US |
dc.subject | water stability | en_US |
dc.title | Static and Dynamic Water Motion-Induced Instability in Oxide Thin-Film Transistors and Its Suppression by Using Low-k Fluoropolymer Passivation | en_US |
dc.type | Article | en_US |
dc.relation.no | 31 | - |
dc.relation.volume | 9 | - |
dc.identifier.doi | 10.1021/acsami.7b05948 | - |
dc.relation.page | 26161-26168 | - |
dc.relation.journal | ACS APPLIED MATERIALS & INTERFACES | - |
dc.contributor.googleauthor | Choi, Seungbeom | - |
dc.contributor.googleauthor | Jo, Jeong-Wan | - |
dc.contributor.googleauthor | Kim, Jaeyoung | - |
dc.contributor.googleauthor | Song, Seungho | - |
dc.contributor.googleauthor | Kim, Jaekyun | - |
dc.contributor.googleauthor | Park, Sung Kyu | - |
dc.contributor.googleauthor | Kim, Yong-Hoon | - |
dc.relation.code | 2017001478 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E] | - |
dc.sector.department | DEPARTMENT OF PHOTONICS AND NANOELECTRONICS | - |
dc.identifier.pid | jaekyunkim | - |
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