Gap-Fill Characteristics and Film Properties of DMDMOS Fabricated by an F-CVD System
- Title
- Gap-Fill Characteristics and Film Properties of DMDMOS Fabricated by an F-CVD System
- Author
- 좌용호
- Keywords
- gap fill; f-cvd; low-k; trench pattern; microelectronic
- Issue Date
- 2016-09
- Publisher
- 한국재료학회
- Citation
- 한국재료학회지, v. 26, No. 9, Page. 455-459
- Abstract
- The deposition process for the gap-filling of sub-micrometer trenches using DMDMOS, (CH3)2Si(OCH3)2, and CxHyOz by flowable chemical vapor deposition (F-CVD) is presented. We obtained low-k films that possess superior gap-filling properties on trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on IMD and STI for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universal in other chemical vapor deposition systems.
- URI
- http://db.koreascholar.com/Article?code=317132https://repository.hanyang.ac.kr/handle/20.500.11754/102737
- ISSN
- 2287-7258; 1225-0562
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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