Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박재근 | - |
dc.date.accessioned | 2019-03-25T05:43:53Z | - |
dc.date.available | 2019-03-25T05:43:53Z | - |
dc.date.issued | 2016-10 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v. 109, NO 18, 182405 | en_US |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.issn | 1077-3118 | - |
dc.identifier.uri | https://aip.scitation.org/doi/10.1063/1.4967172 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/101156 | - |
dc.description.abstract | A tunneling magneto-resistance (TMR) ratio of similar to 163% at an annealing temperature of 400 degrees C was achieved in a single MgO-based perpendicular-magnetic-tunneling-junction (p-MTJ) spin valve with a tungsten (W)/tantalum (Ta) seed and W capping layer instead of with a Ta seed and capping layer. This was done by improving the interface perpendicular magnetic anisotropy (i-PMA) characteristic of the Co2Fe6B2 free layer and face-centered-cubic (f.c.c.) crystallinity of the MgO tunneling barrier. In particular, a TMR ratio of similar to 141% at an annealing temperature of 400 degrees C and a thermal stability at room temperature of similar to 61 were achieved in a double MgO-based p-MTJ spin valve with W/Ta seed, W spacer, and W capping layers by doubling the i-PMA magnetic moment and increasing slightly magnetic anisotropy field (H-k). Published by AIP Publishing. | en_US |
dc.description.sponsorship | This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) grant funded by the Korea Government (MSIP) (No. 2014R1A2A1A01006474) and Brain Korea 21 PLUS Program in 2014. | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER INST PHYSICS | en_US |
dc.subject | MAGNETIC-ANISOTROPY | en_US |
dc.subject | MAGNETORESISTANCE | en_US |
dc.subject | JUNCTIONS | en_US |
dc.title | Effect of double MgO tunneling barrier on thermal stability and TMR ratio for perpendicular MTJ spin-valve with tungsten layers | en_US |
dc.type | Article | en_US |
dc.relation.no | 18 | - |
dc.relation.volume | 109 | - |
dc.identifier.doi | 10.1063/1.4967172 | - |
dc.relation.page | 182405-182405 | - |
dc.relation.journal | APPLIED PHYSICS LETTERS | - |
dc.contributor.googleauthor | Lee, Seung-Eun | - |
dc.contributor.googleauthor | Takemura, Yasutaka | - |
dc.contributor.googleauthor | Park, Jea-Gun | - |
dc.relation.code | 2016003157 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | parkjgl | - |
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